REVISIONS
LTR
A
DESCRIPTION
Corrected the parameter unit for Supply current standby @ 0 MHz and
58.8 MHz the symbol is I
DD2
(SB) on Table I from 5 mA to 5 uA. ksr
Changed Table I parameters for Supply current operating @ 1 MHz
from 40 mA to 70 mA, Supply current operating @ 58.8 MHz from 100
mA to 122 mA. Changed Supply current standby @ 0 MHz and 58.8
MHz the symbol is I
DD1
(SB) on Table I from 35 mA to 65 mA.
Changed Supply current standby @ 0 MHz and 58.8 MHz the symbol
is I
DD2
(SB) on Table I from 5
A
to 8
A.
Changed Data retention
current for subgroup 2 from 30 mA to 55 mA, and for subgroups 1 and
3; from 500
A
to 700
A.
ksr
Section 1.3, changed supply voltage range high end (V
DD1
) to 2.1V,
changed T
A
to T
C
. Section 1.4 changed T
A
to T
C
, added new footnote
4/. Renumbered footnotes in section 1.5. Made significant change to
max value in Table I for Operating supply current I
DD1
and Supply
current standby I
DD1
. New footnote 2/ added, other footnotes
renumbered. Made changes to Figure 1 case outline X for dimensions
b through c1, D1, and E1. ksr
DATE (YR-MO-DA)
05-05-12
APPROVED
Raymond Monnin
B
05-11-29
Raymond Monnin
C
09-09-15
Charles F. Saffle
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
C
15
C
16
C
17
C
18
REV
SHEET
PREPARED BY
Kenneth Rice
CHECKED BY
Rajesh Pithadia
C
19
C
20
C
21
C
1
C
22
C
2
C
3
C
4
C
5
C
6
C
7
C
8
C
9
C
10
C
11
C
12
C
13
C
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE FOR USE BY All
DEPARTMENTS AND
AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
APPROVED BY
Raymond Monnin
DRAWING APPROVAL DATE
05-03-31
REVISION LEVEL
C
MICROCIRCUIT, MEMORY, DIGITAL,
CMOS, 512K x 32-BIT (16 M),
RADIATION-HARDENED, DUAL
VOLTAGE SRAM, MULTICHIP MODULE
SIZE
A
SHEET
1 OF
22
5962-E225-09
CAGE CODE
67268
5962-04227
DSCC FORM 2233
APR 97
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
1.2 PIN. The PIN shall be as shown in the following example:
5962
F
04227
01
Q
X
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
\/
Drawing number
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
1.2.1 RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535 appendix A
specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device types. The device types shall identify the circuit function as follows:
Device type
01
02
Generic number 1/
8CR512K32
8CR512K32
Circuit function
512K X 32-bit rad-hard SRAM (Mil Temp)
512K X 32-bit rad-hard SRAM (Extended Temp)
Access time
17 ns
17 ns
1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN
class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
Q, V
1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
See figure 1
Terminals
68
Package style
Flat pack
1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38535 for classes Q and V or MIL-PRF-38535, appendix A for
device class M.
1/ Generic numbers are also listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document
and will also be listed in QML-38535 and MIL-HDBK-103.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
C
5962-04227
SHEET
2
1.3 Absolute maximum ratings. 2/ 3/
Supply voltage range, (V
DD1
)................................................................................
Supply voltage range, (V
DD2
)................................................................................
Voltage range on any pin .....................................................................................
Input current, dc ...................................................................................................
Power dissipation .................................................................................................
Case temperature range, (T
C
) Device 01 ............................................................
Device 02 .......................................
Storage temperature range, (T
STG
) ......................................................................
Junction temperature, (T
J
) ...................................................................................
Thermal resistance, junction-to-case, (
JC
): Case X ...........................................
1.4 Recommended operating conditions.
Supply voltage range, (V
DD1
)................................................................................
Supply voltage range, (V
DD2
)................................................................................
Supply voltage, (V
SS
) ...........................................................................................
Input voltage, dc ..................................................................................................
Case temperature range, (T
C
) Device 01 ............................................................
Device 02 .......................................
1.5 Radiation features
Maximum total dose available (dose rate = 1 rads(Si)/s) ....................................
Dose rate upset ...................................................................................................
Dose rate survivability .........................................................................................
Single event phenomenon (SEP) effective ..........................................................
linear energy threshold (LET) with no upsets ....................................................
with no latch-up .................................................................................................
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of
this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
30.0 x 10
4
rads(Si)
1.0e9 rad(Si)/s
1.2e12 rad(Si)/s
9 Mev – cm
2
/mg
> 100 MeV-cm
2
/mg 5/
+1.7 V dc to +1.9 V dc 4/
+3.0 V dc to +3.6 V dc
0 V dc
0 V dc to V
DD2
-55°C to +125°C
-40°C to +125°C
-0.3 V dc to +2.1 V dc
-0.3 V dc to +3.8 V dc
-0.3 V dc to +3.8 V dc
+ 5 mA
1.2 W
-55°C to +125°C
-40°C to +125°C
-65°C to +150°C
+150°C
+5°C/W
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or from the Standardization Document
Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
_____________
2/
3/
4/
5/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
All voltage values in this drawing are with respect to V
SS
.
For increase noise immunity, supply voltage (V
DD1
) can be increased to 2.0 V. The parameters in Table I, (Electrical
performance characteristics) are guaranteed through characterization at V
DD1
= 2.0 V dc.
Contact the device manufacturer for detailed lot information.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
C
5962-04227
SHEET
3
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation.
AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)
ASTM Standard F1192
-
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by
Heavy Ion Irradiation of Semiconductor Devices.
(Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive,
West Conshohocken, PA 19428-2959;
http://www.astm.org.)
ELECTRONICS INDUSTRIES ASSOCIATION (EIA)
JEDEC Standard EIA/JESD78
-
IC Latch-Up Test.
(Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA
22201;
http://www.jedec.org.)
(Non-Government standards and other publications are normally available from the organizations that prepare or distribute the
documents. These documents also may be available in or through libraries or other informational services.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535
and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM
plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in
accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3.
3.2.4 Output load circuit. The output load circuit shall be as specified on figure 4.
3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5.
3.2.6 Radiation test circuit. The radiation test circuit shall be as specified on figure 6.
3.2.7 Functional tests. Various functional tests used to test this device are contained in the appendix (herein). If the test
patterns cannot be implemented due to test equipment limitations, alternate test patterns to accomplish the same results shall be
allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer
and shall be made available to the preparing or acquiring activity upon request. For device classes Q and V, alternate test patterns
shall be under the control of the device manufacturer’s Technology Review Board (TRB) in accordance with MIL-PRF-38535 and
shall be made available to the preparing or acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical
performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case
operating temperature range.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
C
5962-04227
SHEET
4
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked.
For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the
option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked.
Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in
accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed
manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing
shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or
for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein)
involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit
group number 41 (see MIL-PRF-38535, appendix A).
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-
PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not
affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance
with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on
all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with
method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical
parameters of method 5004 and substitute lines 1 through 6 of table IIA herein.
The test circuit shall be maintained by the manufacturer under document revision level control and shall be made
available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs,
biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015.
(1)
c.
Dynamic burn-in (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein).
b.
Interim and final electrical parameters shall be as specified in table IIA herein.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
C
5962-04227
SHEET
5
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