2SB1274,2SB1274 pdf中文资料,2SB1274引脚图,2SB1274电路-Datasheet-电子工程世界

2SB1274: 产品描述Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 70; HFE Max: 280; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 100+ MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB; 产品类别分立半导体晶体管; 文件大小171KB，共4页; 制造商Galaxy Microelectronics

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2SB1274概述

Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 70; HFE Max: 280; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 100+ MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

2SB1274规格参数

参数名称	属性值
厂商名称	Galaxy Microelectronics
零件包装代码	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
最大集电极电流 (IC)	4 A
集电极-发射极最大电压	80 V
配置	SINGLE
最小直流电流增益 (hFE)	15
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	PNP
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz
Base Number Matches	1

2SB1274相似产品对比

	2SB1274	2SB1274Q	2SB1274R	2SB1274S
描述	Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 70; HFE Max: 280; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 100+ MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin,
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	4 A	4 A	4 A	4 A
集电极-发射极最大电压	80 V	80 V	80 V	80 V
配置	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	15	70	100	140
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1
端子数量	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	PNP	PNP	PNP	PNP
表面贴装	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz
Base Number Matches	1	1	1	1

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