CMT2N7002K
S
MALL
S
IGNAL
MOSFET
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching and ESD
enhanced performance. It can be used in most applications
requiring up to 115mA DC and can deliver pulsed currents up
to 800mA. This product is particularly suited for low voltage, low
current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
High Density Cell Design for Low R
DS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
ESD Protected 2KV HBM
PIN CONFIGURATION
SOT-23
SYMBOL
TOP View
3
DRAIN
SOURCE
GATE
1
2
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2N7002K
CMT2N7002KX*
Package
SOT-23
SOT-23
*Note:
X : Suffix for Halogen Free Product
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1.0MΩ)
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25℃
Operating and Storage Temperature Range
Thermal Resistance
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
θ
JA
T
L
Symbol
V
DSS
V
DGR
I
D
I
DM
V
GS
V
GSM
P
D
Value
60
60
115
800
±15
±15
225
1.8
-55 to 150
417
300
V
V
mW
mW/℃
℃
℃/W
℃
Unit
V
V
mA
2009/07/17
Rev. 1.1
Champion Microelectronic Corporation
Page 1
CMT2N7002K
S
MALL
S
IGNAL
MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
Characteristic
Symbol
Min
CMT2N7002K
Typ
60
Max
Units
V
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 10
μA)
Drain-Source Leakage Current
(V
DS
= 60 V, V
GS
= 0 V)
(V
DS
= 60 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward (V
gsf
= 15 V)
Gate-Source Leakage Current-Reverse (V
gsf
= -15 V)
Gate Threshold Voltage *
(V
DS
= V
GS
, I
D
= 250
μA)
On-State Drain Current (V
DS
≧
2.0 V
DS(on)
, V
GS
= 10V)
Static Drain-Source On-Resistance *
(V
GS
= 10 V, I
D
= 0.5A)
(V
GS
= 10 V, I
D
= 0.5A, T
J
= 125℃)
(V
GS
= 5.0 V, I
D
= 50mA)
(V
GS
= 5.0 V, I
D
= 50mA, T
J
= 125℃)
Drain-Source On-Voltage *
(V
GS
= 10 V, I
D
= 0.5A)
(V
GS
= 5.0 V, I
D
= 50mA)
Forward Transconductance (V
DS
≧
2.0 V
DS(on)
, I
D
= 200mA) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 25 V, I
D
= 500 mA,
V
gen
= 10 V, R
G
= 25Ω, R
L
= 50Ω) *
V
(BR)DSS
I
DSS
1.0
0.5
I
GSSF
I
GSSF
V
GS(th)
1.0
1.0
-1.0
2.5
μA
mA
μA
μA
V
I
d(on)
R
DS(on)
500
mA
Ω
7.5
13.5
7.5
13.5
V
DS(on)
3.75
0.375
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
SD
I
S
I
SM
80
50
25
5.0
20
40
-1.5
-115
-800
V
mmhos
pF
pF
pF
ns
ns
V
mA
mA
Diode Forward On-Voltage (IS = 115 mA, VGS = 0V)
Source Current Continuous (Body Diode)
Source Current Pulsed
* Pulse Test: Pulse Width
≦300μs,
Duty Cycle
≦2%
2009/07/17
Rev. 1.1
Champion Microelectronic Corporation
Page 2
CMT2N7002K
S
MALL
S
IGNAL
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 5. Capacitance
2009/07/17
Rev. 1.1
Champion Microelectronic Corporation
Page 3
CMT2N7002K
S
MALL
S
IGNAL
MOSFET
PACKAGE DIMENSION
SOT-23
2009/07/17
Rev. 1.1
Champion Microelectronic Corporation
Page 4
CMT2N7002K
S
MALL
S
IGNAL
MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
Sales & Marketing
21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City,
Taipei County 22102,
Taiwan, R.O.C.
T E L : +886-2-2696 3558
F A X : +886-2-2696 3559
2009/07/17
Rev. 1.1
Champion Microelectronic Corporation
Page 5
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