CNX82A
CNX82AX
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
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APPROVALS
UL recognised, File No. E91231
Package System " GG "
'X' SPECIFICATION APPROVALS
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
Certified to EN60950 by :-
Nemko - Certificate No. P01102464
2.54
7.0
6.0
1.2
7.62
6.62
4.0
3.0
0.5
3.0
0.5
3.35
1
2
3
Dimensions in mm
6
5
4
7.62
13°
Max
0.26
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DESCRIPTION
The CNX82A series of optically coupled isolator
consists of an infrared light emitting diode and an
NPN silicon photo transistor in a standard 6 pin dual
in line plastic package with the base pin unconnected.
FEATURES
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High Current Transfer Ratio (40% min)
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Low Saturation Voltage suitable for TTL
integrated circuits
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High BV
CEO
(50V min)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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Base pin unconnected for improved noise
immunity in high EMI environment
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
50V
6V
50mA
160mW
60mA
6V
105mW
SURFACE MOUNT
OPTION SM
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
6/2/08
DB92286
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (I
C
/ I
F
)
(Note 2)
Collector-emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Response Time - Rise, tr
Response Time - Fall, tf
5300
7500
5x10
10
2
2
50
6
50
0.4
1.5
0.4
V
V
RMS
V
PK
Ω
µ
s
µ
s
MIN TYP MAX UNITS
1.2
1.5
10
V
µ
A
TEST CONDITION
I
F
= 10mA
V
R
= 6V
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 10V
10mA I
F
, 0.4V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 4mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 5V , I
F
= 10mA ,
R
L
= 75
Ω
V
V
nA
Coupled
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
6/2/08
DB92286m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
50
30
20
15
20
10
0
10
I
F
= 5mA
150
Collector current I
C
(mA)
40
30
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter saturation voltage V
CE(SAT)
(V)
Forward Current vs. Ambient Temperature
80
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
1
2
V
CE
= 0.4V
T
A
= 25°C
5
10
20
50
I
F
= 10mA
I
C
= 4mA
Relative current transfer ratio
I
F
= 10mA
V
CE
= 0.4V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
Relative current transfer ratio
Forward current I
F
(mA)
DB92286m-AAS/A3
6/2/08
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