SB1316E-V
1. Features
1.6mm(L)×0.8mm small size surface mount type
Thin package of 0.55mm(H) thickness
Transparent clear lens optic
Low power consumption type chip LED
Emitting Light Blue(470nm)
E ; ESD Protected (±2.0KV, 3 Times @100pF, 1.5K )
AUK CORP.
2. Applications
LCD backlighting
Keypad backlighting
Symbol backlighting
Front panel indicator lamp
3. Outline Dimensions
unit : mm
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
)A(100-MDL-KUA
11-GUA-80 :etad O.veR
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SB1316E-V
4. Absolute Maximum Ratings
(Ta=25
o
C)
Characteristic
Power dissipation
Forward current
*1 Peak forward current
Operating temperature range
Storage temperature range
*2 Soldering temperature
Symbol
P
D
I
F
I
FP
T
opr
T
stg
T
sol
Rating
68
20
50
Unit
mW
mA
mA
AUK CORP.
-30
100
*1.Duty ratio = 1/16, Pulse width = 0.1ms
240
Preheating area
150~185 , 90±30sec
185
150
Solder area
220 , max. 60sec
25
0
60
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
)A(100-MDL-KUA
℃
Time from 25
℃
max. 4
/sec
to Peak Temperature max. 6min
150
180
240
Time (sec)
℃
℃
max. 3
/sec
℃
℃
℃
11-GUA-80 :etad O.veR
℃
Temp (
)
Peak Temp max. 240
max. 10sec
℃
*2.Recommended reflow soldering temperature profile
- Preheating 150 to 185 within 120 seconds soldering 240
Gradual cooling (Avoid quenching)
℃
240
for 10 seconds
within 10 seconds
max. -6
℃
℃
∼
∼
-25
80
℃
℃
/sec
SB1316E-V
5. Electrical / Optical Characteristics
(Ta=25
o
C)
Characteristic
Forward voltage
*3 Luminous intensity
Peak wavelength
Spectrum bandwidth
*4 Half angle
θ
/2
Y
*3.The test result of I
F
=10mA is only for reference
*4.
θ
/2
is the off-axis angle where the luminous intensity is
1/2
the peak intensity
Symbol
V
F
I
V
AUK CORP.
Test Condition
I
F
= 10mA
I
F
= 10mA
I
F
= 10mA
I
F
= 10mA
Min
2.8
12
460
-
-
Typ
-
-
-
35
±65
±70
Max
3.4
40
475
-
-
Unit
V
mcd
nm
nm
λ
P
∆
λ
X
I
F
= 10mA
-
-
deg
Test Condition
Forward Voltage [V]
1 : 2.8~3.0
2 : 3.0~3.2
3 : 3.2~3.4
Luminous Intensity [mcd]
A : 12~20
B : 20~29
C : 29~40
(Each V
F
, I
V
,
λ
P
range did not consider a margin. Please refer to ±0.1V of V
F
range,
±18% of I
V
range, ±1nm of
λ
P
range as a permitted limit and do not use to combine
grade classification. It must be used separately grade classification)
* Recommended Soldering Land Pattern
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
)A(100-MDL-KUA
℃
V
F
/
I
V
/
λ
P
Grade Classification (Ta=25 )
@ I
F
=10mA
Peak Wavelength [nm]
a : 460~465
b : 465~470
c : 470~475
11-GUA-80 :etad O.veR
◆
SB1316E-V
6. Characteristic Diagrams
Fig. 1 I
F
- V
F
Fig. 2 I
V
- I
F
Luminous Intensity I
v
[mcd]
AUK CORP.
Forward Current I
F
[mA]
Forward Voltage V
F
[V]
Forward Current I
F
[mA]
Fig. 3 I
F
– Ta
Fig.4 Spectrum Distribution
Forward Current I
F
[mA]
Fig. 5-1 Radiation Diagram(X)
Relative Luminous Intensity Iv [%]
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
)A(100-MDL-KUA
℃
Ambient Temperature Ta [
]
Relative Intensity [%]
Wavelength
λ
[nm]
Fig. 5-2 Radiation Diagram(Y)
Relative Luminous Intensity Iv [%]
11-GUA-80 :etad O.veR
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