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74AUP2G79GM-G

产品描述IC,FLIP-FLOP,DUAL,D TYPE,CMOS,LLCC,8PIN,PLASTIC
产品类别逻辑    逻辑   
文件大小101KB,共19页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
标准
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74AUP2G79GM-G概述

IC,FLIP-FLOP,DUAL,D TYPE,CMOS,LLCC,8PIN,PLASTIC

74AUP2G79GM-G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称NXP(恩智浦)
包装说明QCCN, LCC8,.06SQ,20
Reach Compliance Codeunknown
JESD-30 代码S-PQCC-N8
负载电容(CL)30 pF
逻辑集成电路类型D FLIP-FLOP
最大频率@ Nom-Sup70000000 Hz
最大I(ol)0.0017 A
功能数量2
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码QCCN
封装等效代码LCC8,.06SQ,20
封装形状SQUARE
封装形式CHIP CARRIER
包装方法TAPE AND REEL
电源1.2/3.3 V
Prop。Delay @ Nom-Sup25.6 ns
认证状态Not Qualified
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子形式NO LEAD
端子节距0.5 mm
端子位置QUAD
触发器类型POSITIVE EDGE

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74AUP2G79
Low-power dual D-type flip-flop; positive-edge trigger
Rev. 02 — 19 March 2008
Product data sheet
1. General description
The 74AUP2G79 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
The 74AUP2G79 provides the dual positive-edge triggered D-type flip-flop. Information on
the data input (nD) is transferred to the nQ output on the LOW-to-HIGH transition of the
clock pulse (nCP). The nD input must be stable one set-up time prior to the LOW-to-HIGH
clock transition for predictable operation.
2. Features
I
Wide supply voltage range from 0.8 V to 3.6 V
I
High noise immunity
I
Complies with JEDEC standards:
N
JESD8-12 (0.8 V to 1.3 V)
N
JESD8-11 (0.9 V to 1.65 V)
N
JESD8-7 (1.2 V to 1.95 V)
N
JESD8-5 (1.8 V to 2.7 V)
N
JESD8-B (2.7 V to 3.6 V)
I
ESD protection:
N
HBM JESD22-A114E Class 3A exceeds 5000 V
N
MM JESD22-A115-A exceeds 200 V
N
CDM JESD22-C101-C exceeds 1000 V
I
Low static power consumption; I
CC
= 0.9
µA
(maximum)
I
Latch-up performance exceeds 100 mA per JESD78 Class II
I
Inputs accept voltages up to 3.6 V
I
Low noise overshoot and undershoot < 10 % of V
CC
I
I
OFF
circuitry provides partial Power-down mode operation
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C

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