Philips Semiconductors
Product specification
Triple buffer gate
FEATURES
•
Wide supply voltage range from 2.0 to 6.0 V
•
Symmetrical output impedance
•
High noise immunity
•
Low power dissipation
•
Balanced propagation delays
•
Very small 8-pin package
•
Output capability: standard
•
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
6.0 ns.
DESCRIPTION
74HC3G34; 74HCT3G34
The 74HC3G/HCT3G34 is a high-speed Si-gate CMOS
device and is pin compatible with low power Schottky TTL
(LSTTL). Specified in compliance with JEDEC
standard no. 7.
The 74HC3G/HCT3G34 provides three buffers.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs.
2. For 74HC3G34 the condition is V
I
= GND to V
CC
.
For 74HCT3G34 the condition is V
I
= GND to V
CC
−
1.5 V.
FUNCTION TABLE
See note 1.
INPUT
nA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
2003 May 19
2
OUTPUT
nY
L
H
PARAMETER
propagation delay nA to nY
input capacitance
power dissipation capacitance per gate
notes 1 and 2
CONDITIONS
HC3G34
C
L
= 50 pF;
V
CC
= 4.5 V
9
1.5
10
HCT3G34
10
1.5
9
ns
pF
pF
UNIT
Philips Semiconductors
Product specification
Triple buffer gate
RECOMMENDED OPERATING CONDITIONS
74HC3G34
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per
device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
−
−
−
TYP.
5.0
−
−
+25
74HC3G34; 74HCT3G34
74HCT3G34
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
V
CC
V
CC
+125
V
V
V
°C
MAX.
6.0
V
CC
V
CC
+125
t
r
, t
f
−
6.0
−
1000
500
400
−
−
−
−
6.0
−
−
500
−
ns
ns
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
°C
the value of P
D
derates linearly with 2.5 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40
to +125
°C;
note 2
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V; note 1
note 1
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
MAX.
+7.0
±20
±20
25
50
+150
300
UNIT
V
mA
mA
mA
mA
°C
mW
2003 May 19
5
嵌入式系统
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