74AUP1G885
Low-power dual function gate
Rev. 9 — 31 January 2013
Product data sheet
1. General description
The 74AUP1G885 provides two functions in one device. The output state of the outputs
(1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean
function: 1Y = A
C. The output 2Y provides the Boolean function: 2Y = A
B + A
C.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; I
CC
= 0.9
A
(maximum)
Latch-up performance exceeds 100 mA per JESD78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
CC
I
OFF
circuitry provides partial Power-down mode operation
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C
NXP Semiconductors
74AUP1G885
Low-power dual function gate
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74AUP1G885DC
74AUP1G885GT
74AUP1G885GF
74AUP1G885GD
74AUP1G885GM
74AUP1G885GN
74AUP1G885GS
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
Name
VSSOP8
XSON8
XSON8
XSON8
XQFN8
XSON8
XSON8
Description
Version
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1
1.95
0.5 mm
extremely thin small outline package; no leads;
8 terminals; body 1.35
1
0.5 mm
SOT1089
Type number
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; body 3
2
0.5 mm
plastic, extremely thin quad flat package; no leads;
8 terminals; body 1.6
1.6
0.5 mm
extremely thin small outline package; no leads;
8 terminals; body 1.2
1.0
0.35 mm
extremely thin small outline package; no leads;
8 terminals; body 1.35
1.0
0.35 mm
SOT902-2
SOT1116
SOT1203
4. Marking
Table 2.
Marking codes
Marking code
[1]
pS8
pS8
58
pS8
pS8
58
58
Type number
74AUP1G885DC
74AUP1G885GT
74AUP1G885GF
74AUP1G885GD
74AUP1G885GM
74AUP1G885GN
74AUP1G885GS
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
A
2Y
B
C
1Y
001aah898
Fig 1.
Logic diagram
74AUP1G885
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 9 — 31 January 2013
2 of 23
NXP Semiconductors
74AUP1G885
Low-power dual function gate
6. Pinning information
6.1 Pinning
74AUP1G885
A
1
8
V
CC
B
2
7
1Y
74AUP1G885
2Y
A
B
2Y
GND
1
2
3
4
001aae354
3
6
C
8
7
6
5
V
CC
1Y
C
n.c.
GND
4
5
n.c.
001aae355
Transparent top view
Fig 2.
Pin configuration SOT765-1
Fig 3.
Pin configuration SOT833-1, SOT1089,
SOT1116 and SOT1203
74AUP1G885
terminal 1
index area
1Y
1
V
CC
8
74AUP1G885
A
B
2Y
GND
1
2
3
4
8
7
6
5
V
CC
7
A
C
1Y
C
n.c.
n.c.
2
6
B
3
4
5
2Y
GND
001aaf630
001aaj897
Transparent top view
Transparent top view
Fig 4.
Pin configuration SOT996-2
Fig 5.
Pin configuration SOT902-2
6.2 Pin description
Table 3.
Symbol
Pin description
Pin
SOT765-1, SOT833-1, SOT1089,
SOT996-2, SOT1116 and SOT1203
A, B, C
GND
n.c.
1Y, 2Y
V
CC
74AUP1G885
Description
SOT902-2
7, 6, 2
4
3
1, 5
8
data input
ground (0 V)
not connected
data output
supply voltage
© NXP B.V. 2013. All rights reserved.
1, 2, 6
4
5
7, 3
8
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 9 — 31 January 2013
3 of 23
NXP Semiconductors
74AUP1G885
Low-power dual function gate
7. Functional description
Table 4.
Input
A
L
H
L
H
L
H
L
H
[1]
Function table
[1]
Output
B
L
L
H
H
L
L
H
H
C
L
L
L
L
H
H
H
H
1Y
L
L
L
L
L
H
L
H
2Y
L
H
H
H
L
L
H
L
H = HIGH voltage level; L = LOW voltage level.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
0.5
50
0.5
50
[1]
Max
+4.6
-
+4.6
-
+4.6
20
50
-
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
C
mW
V
O
< 0 V
Active mode and Power-down mode
V
O
= 0 V to V
CC
0.5
-
-
50
65
T
amb
=
40 C
to +125
C
[2]
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For VSSOP8 packages: above 110
C
the value of P
tot
derates linearly with 8.0 mW/K.
For XSON8 and XQFN8 packages: above 118
C
the value of P
tot
derates linearly with 7.8 mW/K.
74AUP1G885
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 9 — 31 January 2013
4 of 23
NXP Semiconductors
74AUP1G885
Low-power dual function gate
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t/V
Operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall
rate
V
CC
= 0.8 V to 3.6 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
40
-
Max
3.6
3.6
V
CC
3.6
+125
200
Unit
V
V
V
V
C
ns/V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 0.8 V to 3.6 V
I
O
=
1.1
mA; V
CC
= 1.1 V
I
O
=
1.7
mA; V
CC
= 1.4 V
I
O
=
1.9
mA; V
CC
= 1.65 V
I
O
=
2.3
mA; V
CC
= 2.3 V
I
O
=
3.1
mA; V
CC
= 2.3 V
I
O
=
2.7
mA; V
CC
= 3.0 V
I
O
=
4.0
mA; V
CC
= 3.0 V
V
CC
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.75
V
CC
-
0.70
V
CC
-
0.65
V
CC
-
1.6
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
Conditions
Min
Typ
Max
Unit
0.30
V
CC
V
0.35
V
CC
V
0.7
0.9
V
V
74AUP1G885
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 9 — 31 January 2013
5 of 23
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