74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
Rev. 02 — 10 January 2008
Product data sheet
1. General description
The 74AUP1G386 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G386 provides a single 3-input EXCLUSIVE-OR gate.
2. Features
s
Wide supply voltage range from 0.8 V to 3.6 V
s
High noise immunity
s
Complies with JEDEC standards:
x
JESD8-12 (0.8 V to 1.3 V)
x
JESD8-11 (0.9 V to 1.65 V)
x
JESD8-7 (1.2 V to 1.95 V)
x
JESD8-5 (1.8 V to 2.7 V)
x
JESD8-B (2.7 V to 3.6 V)
s
ESD protection:
x
HBM JESD22-A114E Class 3A exceeds 5000 V
x
MM JESD22-A115-A exceeds 200 V
x
CDM JESD22-C101-C exceeds 1000 V
s
Low static power consumption; I
CC
= 0.9
µA
(maximum)
s
Latch-up performance exceeds 100 mA per JESD 78 Class II
s
Inputs accept voltages up to 3.6 V
s
Low noise overshoot and undershoot < 10 % of V
CC
s
I
OFF
circuitry provides partial Power-down mode operation
s
Multiple package options
s
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
NXP Semiconductors
74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74AUP1G386GW
74AUP1G386GM
74AUP1G386GF
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
SC-88
XSON6
XSON6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
4. Marking
Table 2.
Marking
Marking code
aH
aH
aH
Type number
74AUP1G386GW
74AUP1G386GM
74AUP1G386GF
5. Functional diagram
1
3
6
A
B
C
mnb143
Y
4
1
3
6
=1
4
mnb145
Fig 1. Logic symbol
Fig 2. IEC logic symbol
A
B
Y
C
mnb144
Fig 3. Logic diagram
74AUP1G386_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 10 January 2008
2 of 16
NXP Semiconductors
74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
6. Pinning information
6.1 Pinning
74AUP1G386
74AUP1G386
A
GND
1
2
6
5
C
GND
V
CC
B
B
3
001aad937
A
1
6
C
A
GND
74AUP1G386
1
2
3
6
5
4
C
V
CC
Y
2
5
V
CC
3
4
Y
B
4
Y
001aad939
001aad938
Transparent top view
Transparent top view
Fig 4. Pin configuration SOT363
(SC-88)
Fig 5. Pin configuration SOT886
(XSON6)
Fig 6. Pin configuration SOT891
(XSON6)
6.2 Pin description
Table 3.
Symbol
A
GND
B
Y
V
CC
C
Pin description
Pin
1
2
3
4
5
6
Description
data input A
ground (0 V)
data input B
data output Y
supply voltage
data input C
7. Functional description
Table 4.
Input
A
L
L
L
L
H
H
H
H
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care.
Function table
[1]
Output
B
L
L
H
H
L
L
H
H
C
L
H
L
H
L
H
L
H
Y
L
H
H
L
H
L
L
H
74AUP1G386_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 10 January 2008
3 of 16
NXP Semiconductors
74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
-
−0.5
-
[1]
Max
+4.6
−50
+4.6
±50
+4.6
±20
50
−50
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
°C
mW
V
O
> V
CC
or V
O
< 0 V
Active mode and Power-down mode
V
O
= 0 V to V
CC
−0.5
-
-
-
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SC-88 packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
°C
the value of P
tot
derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
∆t/∆V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
−40
0
Max
3.6
3.6
V
CC
3.6
+125
200
Unit
V
V
V
V
°C
ns/V
74AUP1G386_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 10 January 2008
4 of 16
NXP Semiconductors
74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OFF
∆I
OFF
I
CC
∆I
CC
C
I
C
O
input leakage current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
input capacitance
output capacitance
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
−
0.6 V; I
O
= 0 A;
V
CC
= 3.3 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
V
O
= GND; V
CC
= 0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
1.8
0.1
0.3
×
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
0.5
40
-
-
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
pF
pF
V
CC
−
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.75
×
V
CC
-
0.70
×
V
CC
-
0.65
×
V
CC
-
1.6
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
Conditions
Min
Typ
Max
Unit
0.30
×
V
CC
V
0.35
×
V
CC
V
0.7
0.9
V
V
74AUP1G386_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 10 January 2008
5 of 16
嵌入式系统
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