The UT54ACS14E and the UT54ACTS14E are hex inverters
with schmitt trigger inputs. The circuits perform the Boolean
function Y = A.
The devices are characterized over full HiRel temperature
range of -55C to +125C.
m
CRH CMOS Process
Low power consumption
Wide power supply operating range of 3.0V to 5.5V
Available QML Q or V processes
14-lead flatpack
UT54ACS14E - SMD 5962-96524
UT54ACTS14E - SMD 5962-96525
FUNCTION TABLE
INPUT
A
H
L
OUTPUT
Y
L
H
- Latchup immune
High speed
PINOUTS
14-Lead Flatpack
Top View
A1
Y1
A2
Y2
A3
Y3
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
A6
Y6
A5
Y5
A4
Y4
LOGIC DIAGRAM
LOGIC SYMBOL
A1
A2
A3
A4
A5
A6
(1)
(3)
(5)
(9)
(11)
(13)
1
(2)
(4)
(6)
(8)
(10)
(12)
Y1
Y2
Y3
Y4
Y5
Y6
A4
Y4
A3
Y3
A2
Y2
A1
Y1
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
A5
Y5
A6
Y6
1
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
LIMIT
1.0E6
80
108
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum package power dissipation
permitted @ Tc = +125
o
C
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
2. Per MIL-STD-883, method 1012.1, Section 3.4.1, P
D
= (T
j(max)
- T
c(max)
) /
jc
LIMIT
-0.3 to 7.0
-0.3 to V
DD
+ 0.3
-65 to +150
+175
+300
15
10
3.3
UNITS
V
V
C
C
C
C/W
mA
W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 5.5
0 to V
DD
-55 to +125
UNITS
V
V
C
2
DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS14E
7
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
; -55C < T
C
< +125C)
SYMBOL
V
T+
V
T-
V
H1
V
H2
I
IN
V
OL
DESCRIPTION
Schmitt trigger positive-going
threshold
1
Schmitt trigger negative-going
threshold
1
Range of hysteresis (V
T+
- V
T-
)
Range of hysteresis (V
T+
- V
T-
)
Input leakage current
Low-level output voltage
3
CONDITION
V
DD
from 3.0V to 5.5V
V
DD
from 3.0V to 5.5V
V
DD
from 4.5V to 5.5V
V
DD
from 3.0V to 3.6V
V
IN
= V
DD
or V
SS
I
OL
= 100A
V
DD
from 3.0V to 5.5V
V
OH
High-level output voltage
3
I
OH
= -100A
V
DD
from 3.0V to 5.5V
I
OS1
Short-circuit output current
2 ,4
V
O
= V
DD
and V
SS
V
DD
from 4.5V to 5.5V
I
OS2
Short-circuit output current
2 ,4
V
O
= V
DD
and V
SS
V
DD
from 3.0V to 3.6V
I
OL1
Low level output current
9
(sink)
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
DD
from 4.5V to 5.5V
I
OL2
Low level output current
9
(sink)
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
DD
from 3.0V to 3.6V
I
OH1
High level output current
9
(source)
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
V
DD
from 4.5V to 5.5V
I
OH2
High level output current
9
(source)
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
V
DD
from 3.0V to 3.6V
-6
mA
-8
mA
6
mA
8
mA
-100
100
mA
-200
200
mA
V
DD
- 0.25
V
0.3V
DD
0.6
0.3
-1
1.5
1.2
1
0.25
MIN
MAX
0.7V
DD
UNIT
V
V
V
V
A
V
3
P
total1
P
total2
Power dissipation
2, 8
Power dissipation
2, 8
C
L
= 50pF
V
DD
from 4.5V to 5.5V
C
L
= 50pF
V
DD
from 3.0V to 3.6V
1.9
mW/
MHz
mW/
MHz
A
0.76
I
DDQ
Quiescent Supply Current
V
IN
= V
DD
or V
SS
V
DD
from 3.0V to 5.5V
= 1MHz, V
DD
= 0
= 1MHz, V
DD
= 0
10
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
15
15
pF
pF
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
5.0E5
amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/
MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
1E6 rads(Si) per MIL-STD-883 Method 1019.
8. Power dissipation specified per switching output.
9. Guaranteed by characterization, but not tested.
2008年7月9日, CombOLED 研究项目的工作重点是开发出高性价比的生产工艺，以实现有机发光二极管 (OLED) 的量产。欧司朗光电半导体公司固态照明部主管 Bernhard Stapp 表示：“该项目由欧盟提供资金支持，欧司朗负责协调运作，旨在为推行新型照明光源应用创造必要的条件。”这包括采用性价比卓越的方法构建新型元件架构，从而生产出大幅面透明光源。作为 LED 市场的创新推...[详细]
UHF和HF都是一般的技术分类，不过每一类都有独立的支持协议。HF在13.56MHz频段更具有一致性，虽然国际业内行业标准很多。UHF RFID在858-960MHz频段已商业化。同时也有多种国际标准支持，包括EPC global Gen 2。 标签与读写器通过无线链接交换数据。链接可以通过适合任何频段的、具有不同读取范围和抗干扰性的EMF或RF场实现。HF RFID技术主要通过电磁场传送信...[详细]
随着阅读器与标签价格的降低和全球市场的扩大，射频标识 RFID(以下简称RFID)的应用与日俱增。标签既可由阅读器供电(无源标签)，也可以由标签的板上电源供电(半有源标签和有源标签)。由于亚微型无源 CMOS 标签的成本降低，库存和其他应用迅速增加。一些评估表明，随着无源标签的价格持续下降，几乎每一个售出产品的内部都将有一个 RFID 标签。由于无源 RFID 标签的重要性及其独特的工程实现...[详细]
汽车电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
