LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
•
Applications
Inverter, Interface, Driver
3
LDTB114EWT1G
Features
1
2
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
•
We declare that the material of product compliance with
RoHS requirements.
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
Limits
Unit
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
CC
V
IN
I
C
P
D
Tj
Tstg
−50
−40
to
+10
−500
200
150
−55
to
+150
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
LDTB114EWT1G
LDTB114EWT3G
Marking
Q6
Q6
R1 (K)
10
10
R2 (K)
10
10
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗
Characteristics of built-in transistor
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
∗
Min.
−
−3
−
−
−
56
7
0.8
−
Typ.
−
−
−0.1
−
−
−
10
1
200
Max.
−0.5
−
−0.3
−0.88
−0.5
−
13
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
V
CC
=
−5V,
I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−10mA
I
O
/I
I
=
−50mA/−2.5mA
V
I
=
−5V
V
CC
=
−50V,
V
I
=0V
V
O
=
−5V,
I
O
=
−50mA
−
−
V
CE
=
−10V,
I
E
=50mA, f=100MHz
1/3
LESHAN RADIO COMPANY, LTD.
LDTB114EWT1G
Electrical characteristic curves
-100
-50
-20
-10
-5
-2
-1
Ta=
−40
C
25 C
100 C
OUTPUT CURRENT : Io (
A)
V
O
=
−0.3V
INPUT VOLTAGE : V
I (on)
(
V)
-10m
-5m
Ta= 100 C
25 C
-2m
−40
C
-1m
-500µ
-200µ
-100µ
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0
V
CC
=
−5V
-500m
-200m
-100m
-500µ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
-0.5
-1
-1.5
-2
-2.5
-3
OUTPUT CURRENT : I
O
(
A
)
INPUT VOLTAGE : V
I (off)
(
V)
Fig.1
Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
-1
1k
l
O
/l
I
=20
Ta=100 C
25 C
−40
C
V
O
=
−5V
Ta=100 C
25 C
−40
C
(
V)
-500m
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
-500µ -1m -2m
-5m -10m -20m -50m -100m -200m -500m
500
DC CURRENT GAIN : G
I
(on)
200
100
50
20
10
5
2
OUTPUT VOLTAGE : V
O
1
-500µ -1m -2m
-5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : I
O
(
A)
OUTPUT CURRENT : I
O
(
A)
Fig.4 Output voltage vs. output current
Fig.3 DC current gain vs. output
current
2/3
LESHAN RADIO COMPANY, LTD.
LDTB114EWT1G
SC−70 (SOT−323)
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
E
1
2
E
b
e
A
0.05 (0.002)
A2
L
c
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
A1
GENERIC
MARKING DIAGRAM
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1
XX
M
XX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
mm
inches
3/3
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