LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
•
Applications
Inverter, Interface, Driver
3
LDTC114EWT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
1
BASE
1
2
SOT–323 (SC–70)
•
R1
R2
3
COLLECTOR
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
Limits
50
Unit
V
V
2
EMITTER
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
CC
V
IN
I
O
I
C(Max.)
P
D
Tj
Tstg
−10
to
+40
50
100
200
150
−55
to
+150
mA
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
LDTC114EWT1G
LDTC114EWT3G
Marking
N3
N3
R1 (K)
10
10
R2 (K)
10
10
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗
Characteristics of built-in transistor
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
∗
−
3
−
−
−
30
7
0.8
−
−
−
0.1
−
−
−
10
1
250
0.5
−
0.3
0.88
0.5
−
13
1.2
−
V
V
mA
µA
−
kΩ
−
MHz
V
CC
=5V,
I
O
=100µA
V
O
=0.3V,
I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V,
V
I
=0V
V
O
=5V,
I
O
=5mA
−
−
V
CE
=10V,
I
E
=−5mA,
f=100MHz
1/3
LESHAN RADIO COMPANY, LTD.
LDTC114EWT1G
Electrical characteristic curves
100
50
V
O
=0.3V
10m
5m
V
CC
=5V
OUTPUT CURRENT : Io
(A)
INPUT VOLTAGE : V
I(on)
(V)
20
10
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
Ta=−40°C
25°C
100°C
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Ta=100°C
25°C
−40°C
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
DC CURRENT GAIN : G
I
V
O
=5V
Ta=100°C
25°C
−40°C
1
500m
l
O
/l
I
=20
Ta=100°C
25°C
−40°C
OUTPUT VOLTAGE : V
O(on)
(V)
200
100
50
20
10
5
2
200m
100m
50m
20m
10m
5m
2m
1
100µ 200µ 500µ1m 2m
5m 10m 20m 50m100m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
2/3
LESHAN RADIO COMPANY, LTD.
LDTC114EWT1G
SC−70 (SOT−323)
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
E
1
2
E
b
e
A
0.05 (0.002)
A2
L
c
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
A1
GENERIC
MARKING DIAGRAM
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1
XX
M
XX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
mm
inches
3/3
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