REVISIONS
LTR
A
B
C
D
E
F
G
H
J
DESCRIPTION
Change package designation and add case outline figure. - jak
Add device type 02. - jak
Correct supply voltage nomenclature to comply with device characterization.
Correct dimension A minimum values for case outline X in table of figure 1.
Update boilerplate to latest MIL-PRF-38535 requirements. - CFS
Add device type 03. - CFS
Add device types 04 and 05. Change load capacitance value for AC tests and
add output skew to table IA. Update boilerplate. Editorial changes throughout.
- LTG
Add device types 06 and 07. Add figure A-2 to appendix A. Update radiation
hardness assurance requirements. - LTG
Correct the input voltage range specified in paragraph 1.4. - CFS
Add new device number 08. Add case outline Y for device type 08 in section
1.2.4. - MAA
To add footnotes 21/ and 22/ for t
SKEW
and t
DSKEW
for device types 01 to 07 in
table IA. Update radiation features in section 1.5 and SEP test limit table IB. -
MAA
Add equivalent test circuits and footnote 5 to figure 5. Delete class M
requirements per updated boilerplate paragraphs. - MAA
DATE (YR-MO-DA)
00-04-11
00-05-30
01-03-06
02-05-10
04-07-29
07-06-27
08-05-05
09-10-05
10-12-20
APPROVED
Monica L. Poelking
Monica L. Poelking
Thomas M. Hess
Thomas M. Hess
Thomas M. Hess
Thomas M. Hess
Thomas M. Hess
Thomas M. Hess
Thomas M. Hess
K
12-12-10
Thomas M. Hess
REV
SHEET
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
K
35
K
15
K
36
K
16
K
37
K
17
K
38
K
18
REV
SHEET
K
39
K
19
K
40
K
20
K
41
K
21
K
1
K
42
K
22
K
2
K
43
K
23
K
3
K
44
K
24
K
4
K
45
K
25
K
5
K
46
K
26
K
6
K
47
K
27
K
7
K
48
K
28
K
8
K
49
K
29
K
9
K
30
K
10
K
31
K
11
K
32
K
12
K
33
K
13
K
34
K
14
PREPARED BY
Charles F. Saffle, Jr.
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
CHECKED BY
Charles F. Saffle, Jr.
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
APPROVED BY
Monica L. Poelking
DRAWING APPROVAL DATE
99-05-10
REVISION LEVEL
MICROCIRCUIT, DIGITAL, RADIATION HARDENED,
ADVANCED CMOS, SCHMITT 16-BIT BIDIRECTIONAL
MULTI-PURPOSE TRANSCEIVER WITH THREE-STATE
OUTPUTS, MONOLITHIC SILICON
SIZE
CAGE CODE
K
A
67268
5962-98580
SHEET 1 OF 49
DSCC FORM 2233
5962-E042-13
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
98580
01
V
X
X
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
\/
Drawing number
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
Generic number
54ACS164245S
Circuit function
Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver
with three-state outputs and cold sparing
Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver
with three-state outputs, cold sparing, and extended voltage range
Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver
with three-state outputs, cold sparing, extended voltage range, and extended
industrial temperature range of -40°C to +125°C
Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver
with three-state outputs, cold sparing, extended voltage range, and
enhanced AC’s
02
54ACS164245S 1/
03
54ACS164245S 1/ 2/
04
54ACS164245SE 1/
05
54ACS164245SE 1/ 2/ Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver
with three-state outputs, cold sparing, extended voltage range, extended
industrial temperature range of -40°C to +125°C, and enhanced AC’s
54ACS164245SEI 1/
Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver
with three-state outputs, cold sparing, warm sparing, extended voltage
range, enhanced AC’s and improved power management
06
07
54ACS164245SEI 1/ 2/ Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver
with three-state outputs, cold sparing, warm sparing, extended voltage
range, industrial temperature range of -40°C to +125°C, enhanced AC’s and
improved power management
54ACS164245
Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver
with three-state outputs and cold sparing.
08
_______
1/ Device types 02, 03, 04, 05, 06, and 07 have an extended voltage range.
2/ Device types 03, 05, and 07 have an extended industrial temperature range of -40°C to +125°C.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
K
5962-98580
SHEET
2
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows:
Device class
Q or V
Device requirements documentation
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Y
Descriptive designator
See figure 1
See figure 1
Terminals
48
48
Package style
Flat pack
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
1.3 Absolute maximum ratings. 1/ 2/ 3/
Supply voltage ranges (V
DD
):
5.0 V supply (V
DD1
)...........................................................................................
3.3 V supply (V
DD2
)...........................................................................................
DC input voltage range (V
IN
): 4/
A port ................................................................................................................
B port ................................................................................................................
DC output voltage range (V
OUT
):
A port ................................................................................................................
B port ................................................................................................................
DC input current, any one input (I
IN
):
-0.3 V dc to +6.0 V dc
-0.3 V dc to +6.0 V dc
-0.3 V dc to V
DD1
+ 0.3 V dc
-0.3 V dc to V
DD1
+ 0.3 V dc
-0.3 V dc to V
DD1
+ 0.3 V dc
-0.3 V dc to V
DD1
+ 0.3 V dc
A port ................................................................................................................
±10
mA
B port ................................................................................................................
±10
mA
Storage temperature range (T
STG
) ...................................................................... -65°C to +150°C
Lead temperature (soldering, 10 seconds) ......................................................... +300°C
Thermal resistance, junction-to-case (θ
JC
) .......................................................... See MIL-STD-1835
Junction temperature (T
J
).................................................................................... +175°C
Maximum power dissipation at T
A
= +55°C (in still air) (P
D
) ................................ 1.0 W 5/
__________
See footnotes on next sheet.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
K
5962-98580
SHEET
3
1.4 Recommended operating conditions. 2/ 3/ 6/
Supply voltage range (V
DD
):
Device type 01 (V
DD1
)........................................................................................ +4.5 V dc to +5.5 V dc
or 3.13 V dc to 3.6 V dc
Device types 02, 03, 04, 05, 06, and 07 (V
DD1
) ................................................. +4.5 V dc to +5.5 V dc
or 3.0 V dc to 3.6 V dc
Device type 08 (V
DD1
)........................................................................................ +4.5 V dc to +5.5 V dc
or 2.3 V dc to 3.6 V dc
Device type 01 (V
DD2
)........................................................................................ +3.13 V dc to +3.6 V dc
or +4.5 V dc to +5.5 V dc
Device types 02, 03, 04, 05, 06, and 07 (V
DD2
) ................................................. +3.0 V dc to +3.6 V dc
or +4.5 V dc to +5.5 V dc
Device type 08 (V
DD2
)........................................................................................ +2.3 V dc to +3.6 V dc
or +4.5 V dc to +5.5 V dc
Input voltage range (V
IN
):
A port ................................................................................................................ +0.0 V dc to V
DD1
B port ................................................................................................................ +0.0 V dc to V
DD1
½½½½
OE
Control inputs (OE1,
½½½½
2, DIR1, DIR2) (for device 01 to 07)............................. +0.0 V dc to V
DD1
Output voltage range (V
OUT
)................................................................................ +0.0 V dc to V
DD1
Case operating temperature range (T
C
):
Device types 01, 02, 04, 06 and 08 .................................................................. -55°C to +125°C
Device types 03, 05, and 07 ............................................................................. -40°C to +125°C
Maximum input rise or fall time rate (∆t/∆V):
at V
DD1
= 4.5 V (for device 01 to 07) ................................................................ 1 ns/V 7/
Maximum input rise or fall time rate (∆t/∆V):
at V
CC
= 3.0, 4.5 or 5.5 V (for device 08) ....................................................... 0 to 8 ns/V 7/
1.5 Radiation features. 8/
Maximum total dose available (dose rate = 50 - 300 rad (Si)/s) ........................ 100 Krad (Si)
Single event phenomenon (SEP) :
Effective LET, no upsets (SEU) (see 4.4.4.4)
2
for device types 01 to 07 ................................................................................ ≤ 80 MeV/(mg/cm )
2
for device type 08 ........................................................................................... ≤ 64 MeV/(mg/cm )
Effective LET , no latch-up (SEL)
2
for device types 01-05 .................................................................................... ≤ 120 MeV/(mg/cm )
2
for device types 06-07 .................................................................................... ≤ 114 MeV/(mg/cm )
2
for device type 08 ........................................................................................... ≤ 111 MeV/(mg/cm )
__________
1/
2/
3/
4/
5/
6/
7/
8/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
Unless otherwise noted, all voltages are referenced to V
SS
.
The limits for the parameters specified herein shall apply over the full specified V
DD
range and case temperature range of
-55°C to +125°C for device types 01, 02, 04, 06 and, 08; and -40°C to +125°C for device types 03, 05 and 07.
For cold spare mode (V
DD
= V
SS
), V
IN
may be –0.3 V to the maximum recommended operating V
DD
+ 0.3 V.
The maximum package power dissipation is calculated by using a junction temperature of 150°C, a board trace length of
750 mils and thermal resistance, junction-to-air ambient (θ
JA
) is 95°C/W.
Unused inputs must be held high or low to prevent them from floating.
Derate system propagation delays by difference in rise time to switch point for tr or tf > 1 ns/V.
Radiation testing is performed on the standard evaluation circuit.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
K
5962-98580
SHEET
4
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those
cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
https://assist.dla.mil/quicksearch/
or from the Standardization Document
Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of Semiconductor Devices.
(Copies of this document is available online at
http://www.astm.org/
or from ASTM International, P. O. Box C700, 100 Barr
Harbor Drive, West Conshohocken, PA 19428-2959).
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JEDEC JESD 78 – IC Latch-Up Test
(Copies of these documents are available online at
http://www.jedec.org/
or from JEDEC – Solid State Technology
Association, 3103 North 10th Street, Suite 240–S, Arlington, VA 22201.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535, and as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
K
5962-98580
SHEET
5