November 14, 2012 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 200967G
DATA SHEET • SKY65050-372LF LOW NOISE TRANSISTOR
The effect of source inductance varies with frequency. Too little
source inductance increases gain and high frequency stability, but
at the cost of decreased in-band stability. Too much source
inductance decreases high frequency stability and gain, but
increases in-band stability. It is very important to find the optimum
tuning of source inductance that balances all of these variables.
The output matching topology is typical for an RF transistor.
Component L3 is the RF choke that prevents RF signals from
reaching the DC supply. Component C4 is the DC blocking
capacitor. Components C10 and C11 improve output return loss
and 3
rd
Order Output Intercept Point (OIP3) performance.
Table 3. SKY65050-372LF Absolute Maximum Ratings
Parameter
Input power
Output power
Drain source voltage
Gate
to
source voltage
Gate
to
drain voltage
Drain current
Gate current
Power dissipation
Channel temperature
Storage temperature
Operating temperature
Note:
Electrical and Mechanical Specifications
The absolute maximum ratings of the SKY65050-372LF are
provided in Table 3. The recommended operating conditions are
specified in Table 4 and electrical specifications are provided in
Table
5.
Performance characteristics for the SKY65050-372LF are
illustrated in Figures 3 through 11.
Symbol
P
IN
P
OUT
V
DS
V
GS
V
GD
I
DS
I
GS
P
DIS
T
CHAN
T
STG
T
OP
Minimum
Typical
Maximum
+10
+20
Units
dBm
dBm
V
V
V
mA
μA
mW
°C
6.0
–5.0
–5.0
55
100
240
150
–65
–40
+125
+85
°C
°C
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.
Attention: Observe Precautions for Handling Electrostatic Sensitive Devices
ESD Man-Machine (MM) Model = <50 V (Class A)
ESD Human Body Model (HBM) = 150 V (Class 0)
ESD Charge Device Model (CDM) = 500 V (Class 3)
Electrostatic Discharge (ESD) can damage this device, which must be protected from ESD at all times. Static
charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge
without detection. Industry-standard ESD precautions should be used at all times.
= 20 mA, Parameters Include a 2.4 GHz Matching Network, Unless
Otherwise Noted)
Parameter
Saturated drain current
Pinchoff voltage
Transconductance
V
P
g
M
Symbol
I
DSS
Test Condition
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
DS
= 2.5%
of
I
DSS
V
DS
= 2 V,
g
M
=
ΔI
DS
/ΔV
GS
,
measured at I
DS
= 20 % of
I
DSS
V
GD
= V
GS
=
–3
V
@ 2.4 GHz
@ 2.4 GHz
@ 2.4 GHz
@ 2.4 GHz
@ 2.4 GHz
P
OUT
=
–10
dBm/tone,
ΔF
= 1 MHz, @ 2.4 GHz
P
OUT
=
–10
dBm/tone,
ΔF
= 1 MHz, @ 2.4 GHz
@ 2.4 GHz
@ 2.4 GHz
Unconditionally stable,
DC
–
18 GHz
13.5
Min
40
–0.95
40
Typical
55
–0.80
80
Max
70
–0.65
120
Units
mA
V
mS
Gate leakage current
Noise Figure
Gain
Input return loss
Output return loss
Reverse isolation
3
rd
Order Output Intercept Point
3
rd
Order Input Intercept Point
1 dB Output Compression Point
1 dB Input Compression Point
Stability
I
GSS
NF1 (Note
2)
NF2 (Note 3)
|S
21
|
|S11|
|S22|
|S12|
OIP3
IIP3
OP1dB
IP1dB
K
1
0.40
0.65
15.5
18.5
14
22.5
+23.5
+8
+10.5
–4
>1
200
0.85
17.5
μA
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
–
Note 1:
Performance is guaranteed only under the conditions listed in this Table and is not guaranteed over the full operating or storage temperature ranges. Operation at elevated
temperatures may reduce reliability of the device.
Note 2:
NF of device only. Input RF connector, board, and input matching network loss de-embedded from measurement.
Note 3:
NF of device and matching network. Input RF connector and board loss de-embedded from measurement.
Typical Performance Characteristics
(T
OP
= +25
°C,
Characteristic Impedance [Z
O
] = 50
Ω,
V
DD
= 3 V, I
DD
= 20 mA, Includes a 2.4 GHz Matching Network, Unless Otherwise
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
