MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
Order this document
by BC846ALT1/D
NPN Silicon
1
BASE
COLLECTOR
3
BC846ALT1,BLT1
BC847ALT1,
BLT1,CLT1 thru
BC850BLT1,CLT1
2
EMITTER
BC846, BC847 and BC848 are
Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC846
65
80
6.0
100
BC847
BC850
45
50
6.0
100
BC848
BC849
30
30
5.0
100
Unit
V
V
V
mAdc
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Symbol
PD
225
1.8
R
q
JA
PD
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10
µA,
VEB = 0)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector – Base Breakdown Voltage
(IC = 10
m
A)
Emitter – Base Breakdown Voltage
(IE = 1.0
m
A)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C
BC848A,B,C, BC849B,C, BC850B,C
V(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
5.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
ICBO
nA
µA
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
µA,
VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
VCE(sat)
VBE(sat)
VBE(on)
hFE
—
—
—
110
200
420
—
—
—
—
580
—
90
150
270
180
290
520
—
—
0.7
0.9
660
—
—
—
—
220
450
800
0.25
0.6
—
—
700
770
V
V
mV
—
(IC = 2.0 mA, VCE = 5.0 V)
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector – Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base – Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base – Emitter Voltage
(IC = 10 mA, VCE = 5.0 V)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC849B,C, BC850B,C
1.0
VCE = 10 V
TA = 25°C
V, VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
VCE(sat) @ IC/IB = 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
VBE(on) @ VCE = 10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
fT
Cobo
NF
—
—
—
—
10
4.0
100
—
—
—
—
4.5
MHz
pF
dB
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
Figure 1. Normalized DC Current Gain
2.0
VCE , COLLECTOR–EMITTER VOLTAGE (V)
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
0.8
IC = 100 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
Figure 2. “Saturation” and “On” Voltages
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
IB, BASE CURRENT (mA)
10
20
0.2
10
1.0
IC, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
BC847/BC848
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
10
7.0
C, CAPACITANCE (pF)
5.0
Cib
TA = 25°C
400
300
200
3.0
Cob
2.0
100
80
60
40
30
20
0.5 0.7
VCE = 10 V
TA = 25°C
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 5 V
TA = 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0.1 0.2
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0
0.2
0.5
1.0
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
TA = 25°C
1.6
20 mA
1.2
IC =
10 mA
50 mA
100 mA
200 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
–1.0
–1.4
–1.8
θ
VB for VBE
–2.2
–55°C to 125°C
0.8
0.4
–2.6
0
–3.0
0.2
0.5
10 20
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
BC846
40
TA = 25°C
C, CAPACITANCE (pF)
20
Cib
10
6.0
4.0
Cob
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
500
VCE = 5 V
TA = 25°C
200
100
50
20
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R
θJA
, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
R
θJA
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•
Always preheat the device.
•
The delta temperature between the preheat and
soldering should be 100°C or less.*
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad™. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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