LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Cathode
FEATURES
LBAV70TT1G
S-LBAV70TT1G
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LBAV70TT1G
S-LBAV70TT1G
LBAV70TT3G
S-LBAV70TT3G
Marking
A4
A4
Shipping
3000 Tape & Reel
SC-89
10000 Tape & Reel
3
CATHODE
1
ANODE
2
ANODE
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Symbol
(1)
Max
70
200
500
Max
225
1.8
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
T
A
= 25°C
Derate above 25°C
P
D
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
555
300
2.9
345
–55 to +150
R
θJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100
mAdc)
Reverse Voltage Leakage Current (3)
(VR = 70 Vdc)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100
W,
IR(REC) = 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
1. FR–5 = 1.0
×
0.75
×
0.062 in.
2. Alumina = 0.4
×
0.3
×
0.024 in. 99.5% alumina.
3. For each individual diode while the second diode is unbiased.
Rev.O 1/3
V(BR)
70
−
Vdc
IR
IR
CD
VF
−
−
−
5.0
100
1.5
mAdc
nAdc
pF
mVdc
−
−
−
−
trr
VRF
−
−
715
855
1000
1250
6.0
1.75
ns
V
LESHAN RADIO COMPANY, LTD.
LBAV70TT1G,S-LBAV70TT1G
820
Ω
+10 V
2.0 k
100
µH
0.1
µF
D.U.T.
50
Ω
OUTPUT
PULSE
GENERATOR
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
V
R
90%
I
R
INPUT SIGNAL
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
0.1
µF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
Curves Applicable to Each Anode
100
IF, FORWARD CURRENT (mA)
T
A
= 85°C
10
T
A
= -40°C
IR , REVERSE CURRENT (µA)
10
T
A
= 150°C
T
A
= 125°C
1.0
0.1
T
A
= 85°C
T
A
= 55°C
1.0
T
A
= 25°C
0.01
T
A
= 25°C
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 2. Forward Voltage
1.0
CD, DIODE CAPACITANCE (pF)
Figure 3. Leakage Current
0.9
0.8
0.7
0.6
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LBAV70TT1G,S-LBAV70TT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
Rev.O 3/3
能源基础设施
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