SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 4 – MARCH 2000
PARTMARKING DETAILS -
FMMT3905 - 2W
FMMT3906 - 2A
FMMT3905 - FMMT3903
FMMT3906 - FMMT3904
FMMT3905
FMMT3906
C
B
E
COMPLEMENTARY TYPES -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
CollectorEmitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
FMMT3905
MIN
BreakdownVoltages V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Cut-Off Currents
Static Forward
Current
Transfer Ratio
I
CEX
I
BEX
h
FE
30
40
50
30
15
-40
-40
-5
-50
-50
60
80
100
60
30
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
-40
-40
-5
-200
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
FMMT3906. UNIT CONDITIONS.
MAX
V
V
V
-50
-50
nA
nA
I
C
=-10
µ
A, I
E
=0
I
C
=-1mA, I
B
=0*
I
E
=-10
µ
A, I
C
=0
V
CE
=-30V, V
BE(off)
=-3V
V
CE
=-30V, V
EB(off)
=-3V
I
C
=-0.1mA, V
CE
=-1V*
I
C
=-1mA, V
CE
=-1V*
I
C
=-10mA, V
CE
=-1V*
I
C
=-50mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
V
V
I
C
=-10mA, I
B
=-1mA*
I
C
=-50mA, I
B
=-5mA*
I
C
=-10mA, I
B
=-1mA*
I
C
=-50mA, I
B
=-5mA*
-40
-40
-5
MAX MIN
150
300
Saturation
Voltages
V
CE(sat)
V
BE(sat)
-0.25
-0.4
0.25
0.4
-0.65 -0.85 -0.65 -0.85 V
-0.95
-0.95 V
200
4.5
10
5
250
4.5
10
4
Transition
Frequency
Input Capacitance
Noise Figure
f
T
MHz I
C
=-10mA, V
CE
=-20V
f=100MHz
pF
pF
dB
V
CB
=-5V, I
E
=0, f=100KHz
V
BE
=0.5V, I
C
=0, f=100KHz
I
C
=-200mA, V
CE
=-5V
Rg=2k
Ω
, f=30Hz to 15kHz
at -3dB points
Output Capacitance C
obo
C
ibo
N
*Measured under pulsed conditions. Pulse width=200
µ
s. Duty cycle
=1%
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