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HS-2600RH

Data Sheet

August 1999

File Number

3650.1

Radiation Hardened Wideband, High

Impedance Operational Ampliﬁer

HS-2600RH is a radiation hardened internally compensated

bipolar operational ampliﬁer that features very high input

impedance coupled with wideband AC performance. The

high resistance of the input stage is complemented by low

offset voltage (4mV

max

at 25

o

C for HS-2600RH) and low

bias and offset current (10nA max at 25

o

C for HS-2600RH)

to facilitate accurate signal processing. Offset voltage can be

reduced further by means of an external nulling

potentiometer. The 4V/µs minimum slew rate at 25

o

C and

the minimum open loop gain of 100kV/V at 25

o

C enables the

HS-2600RH to perform high gain ampliﬁcation of fast,

wideband signals. These dynamic characteristics, coupled

with fast settling times, make these ampliﬁers ideally suited

to pulse ampliﬁcation designs as well as high frequency or

video applications. The frequency response of the ampliﬁer

can be tailored to exact design requirements by means of an

external bandwidth control capacitor. Other high

performance designs such as high gain, low distortion audio

ampliﬁers, high-Q and wideband active ﬁlters and high

speed comparators, are excellent uses of this part.

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Speciﬁcations for these devices are

contained in SMD 5962-95671. A “hot-link” is provided

on our homepage for downloading.

www.intersil.com/spacedefense/space.asp

Features

• Electrically Screened to SMD # 5962-95671

• QML Qualiﬁed per MIL-PRF-38535 Requirements

• High Input Impedance . . . . . . . . . . . . . . . . . 100MΩ (Min)

500MΩ (Typ)

• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . 3V/µs (Min)

7V/µs (Typ)

• Low Input Bias Current . . . . . . . . . . . . . . . . . . 10nA (Max)

1nA (Typ)

• Low Input Offset Current (HS-2600RH) . . . . . . 4mV (Max)

• Wide Unity Gain Bandwidth . . . . . . . . . . . . . .12MHz (Typ)

• Output Short Circuit Protection

• Total Gamma Dose. . . . . . . . . . . . . . . . . . . . . 10kRAD(Si)

Applications

• Video Ampliﬁer

• Pulse Ampliﬁer

• High-Q Active Filters

• High Speed Comparators

• Low Distortion Oscillators

Pinout

HS7-2600RH (CERDIP) GDIP1-T8

OR

HS7B-2600RH (SBDIP) CDIP2-T8

TOP VIEW

Ordering Information

ORDERING NUMBER

5962D9567101VPA

5962D9567101VPC

INTERNAL

MKT. NUMBER

HS7-2600RH-Q

HS7B-2600RH-Q

TEMP. RANGE

(

o

C)

-55 to 125

BAL

-IN

+IN

V-

1

2

3

4

8

COMP

V+

OUT

BAL

–

+

7

6

5

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

HS-2600RH

Test Circuit

+V

CC

0.1

100K

1 OPEN

2 S3A

S1

OPEN 2

S2

OPEN 2

100K 2

1

OPEN

S3B

V

AC

2

1

2

S5A

DUT

1 S6

+

OPEN

1

S5B 1

S8

2

10K

x2

E

OUT

5K

2

1 S4

50K

ALL RESISTORS =

±1%

(Ω)

ALL CAPACITORS =

±10%

(µF)

OPEN

3

1

S9

2

V2

1

S7

3

BAL 2

ADJ

2

500K

- 1

+

BUFFER

OPEN

1

2K

100pF

†

FOR LOOP STABILITY,

USE MIN VALUE CAPACITOR

TO PREVENT OSCILLATION

50K

†

INCLUDES STRAY

CAPACITANCES

-1/10

AC

OUT

V1

2K

0.1

1

-V

EE

100

NOTE: For Detailed Information, Refer to HS-2600RH Test Technical Brief.

Test Waveforms

SIMPLIFIED TEST CIRCUIT

V

AC

+

-

2kΩ

V

OUT

100pF

SLEW RATE WAVEFORMS

+5.0V

INPUT

-5.0V

+SL

-SL

+5.0V

75%

25%

-5.0V

∆V

OUTPUT

∆V

+5.0V

75%

25%

-5.0V

∆T

SR =

∆V

∆T

OVERSHOOT, RISE AND FALL TIME WAVE FORMS

V

FINAL

= +200mV

0V

10%

OUTPUT

-200mV

t

r

,+OS

t

f

,-OS

t

r

t

f

10%

0V

90%

V

PEAK

-200mV

+200mV

INPUT

0V

V

PEAK

90%

NOTE:

Measured on both positive and negative transitions. Capacitance at compensation pin should be minimized.

2

HS-2600RH

Burn-In Circuit

HS-2600RH CERDIP

1

2

R

1

3

V-

D

2

4

C

2

+

8

7

6

5

C

3

C

1

V+

D

1

NOTES:

1. R

1

= 1MΩ,

±5%,

1/4W (Min)

2. C

1

= C

2

= 0.01µF/Socket (Min) or 0.1µF/Row (Min)

3. C

3

= 0.01µF/Socket (10%)

4. D

1

= D

2

= IN4002 or Equivalent/Board

5. | (V+) - (V-) | = 30V

Irradiation Circuit

C

1

2

R

3

V

2

C

4

6

5

8

C

7

V

1

GND

NOTES:

6. V

1

= +15V

±10%

7. V

2

= -15V

±10%

8. R = 1MΩ

±5%

9. C = 0.1µF

±10%

3

HS-2600RH

Schematic Diagram

COMPENSATION

V+

BAL

R1

1K

Q1

Q3

Q4

Q37

Q5

+INPUT

Q8

Q13

Q12

Q16

Q11

Q6

Q30

Q7

Q9

Q44

Q10

Q17

Q18

Q15

R7

1.35

R19

2.5K

RP1

R8

1K

Q20

R9

4.5K

Q27

Q24

Q46

R11

4.0K

Q21

Q22

Q23

Q49

R12

1.6K

R13

1.6K

Q48

Q50

Q51

R14

2.1K

R15

800

R16

30

V-

-INPUT

Q45

Q47

Q52

Q26

Q25

Q55

Q54

Q56

R18

30

OUT

Q53

R17

30

Q29

Q31

Q28

Q36

Q32

Q35

Q33

Q43

Q57

Q2

Q40

R2

4.18K

R3

1.56K

R4

1.56K

BAL

Q39

Q38

Q41

Q42

Q59

Q58

C3

16pF

C4

4pF

C2

9pF

R5

600

Q60

Q61

R6

30

Q19

R10

2.0K

C1

16pF

4

HS-2600RH

Die Characteristics

DIE DIMENSIONS:

69 mils x 56 mils x 19 mils

±1

mils

1750µm x 1420µm x 483µm

±25.4µm

INTERFACE MATERIALS:

Glassivation:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)

Silox Thickness: 12k

Å

±2k

Å

Nitride Thickness: 3.5k

Å

±1.5k

Å

Top Metallization:

Type: Al, 1% Cu

Thickness: 16k

Å

±2k

Å

Substrate:

Linear Bipolar DI

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential

(Powered Up):

Unbiased

ADDITIONAL INFORMATION:

Worst Case Current Density:

<2 x 10

5

A/cm

2

Transistor Count:

140

Metallization Mask Layout

+IN

-IN

HS-2600RH

BAL

V-

COMP

BAL

V+

OUT

All Intersil semiconductor products are manufactured, assembled and tested under

ISO9000

quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site

http://www.intersil.com

5

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