BDX63
BDX63A
BDX63B
BDX63C
MECHANICAL DATA
Dimensions in mm
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
16.9
10.9
12.8
TO3 Package.
Case connected to collector.
PNP complements are:
BDX62, BDX62A, BDX62B, BDX62C.
ABSOLUTE MAXIMUM RATINGS
(Tcase=25°C unless otherwise stated)
BDX BDX BDX BDX
63 63A 63B 63C
60
80 100 120
80
5
ì
ï
ï
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stj
R
th j-mb
Semelab plc.
Collector - emitter voltage (open base)
Collector - base voltage (open emitter)
Emitter - base voltage (open collector)
Collector current
Collector current (peak)
Base current
Total power dissipation at T
case
= 25°C
Maximum junction temperature
Storage junction temperature
Thermal resistance, junction to mounting base.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
V
V
A
A
mA
W
°C
°C
100
5
ï
ï
120
5
8
12
í
ï
ï
140
5
ï
ï
î
150
90
200
-65 to 200
1.94
°C / W
Prelim. 7/93
BDX63
BDX63A
BDX63B
BDX63C
ELECTRICAL CHARACTERISTICS
(Tj = 25°C,
Parameter
I
CBO
I
CEO
I
EBO
h
FE
V
BE
V
CEsat
C
c
f
hfe
E
(BR)
Collector cut-off current
Collector cut-off current
Emitter cut-off current
D.C. current gain (note 1)
Base - emitter voltage (note 1)
Collector - emitter saturation
voltage
Collector capacitance
Cut-off frequency
Turn-off breakdown energy
with inductive load
unless otherwise stated)
Test Conditions
I
E
= 0, V
CB
= V
CEOmax
I
E
= 0, V
CB
= ½V
CBOmax,
T
j
= 200°C
I
B
= 0, V
CE
= ½V
CEOmax
I
C
= 0, V
EB
= 5V
I
C
= 0.5A, V
CE
= 3V
I
C
= 3A, V
CE
= 3V
I
C
= 8A, V
CE
= 3V
I
C
= 3A, V
CE
= 3V
I
C
= 3A, I
B
= 12mA
I
E
= I
e
= 0, V
CB
= 10V
I
C
= 3A, V
CE
= 3V
–I
Boff
= 0, I
Con
= 4.5 A
t
p
= 1ms, T = 100ms
Min.
Typ.
Max.
0.2
2
0.5
5
Unit.
mA
mA
mA
2500
1000
2600
2.5
2
100
100
50
2.5
100
1.2
V
V
V
pF
kHz
mJ
h
FE1
/h
FE2
D.C. current gain ratio of
I = 3A, V
CE
= 3V
complementary matched pairs
C
ï
h
fe
ï
Small signal current gain
Diode, forward voltage
I
C
= 3A, V
CE
= 3V, f = 1MHz
I
F
= 3A
V
F
Note 1: Measured under pulse conditions , t
p
< 300
m
s,
d
< 2%
R1 typ. 8K
W
R2 typ. 100
W
Circuit diagram.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/93
嵌入式系统
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