SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
*
*
*
*
*
*
625mW POWER DISSIPATION
C
B
E
I
C
CONT 2.5A
I
C
Up To 10A Peak Pulse Current
Excellent h
fe
Characteristics Up To 10A (pulsed)
Extremely Low Saturation Voltage E.g. 10mV Typ.
Exhibits extremely low equivalent on-resistance;
R
CE(sat)
DEVICE TYPE
FMMT717
FMMT718
FMMT720
FMMT722
FMMT723
COMPLEMENT
FMMT617
FMMT618
FMMT619
FMMT624
PARTMARKING
717
718
720
722
723
R
CE(sat)
72m
Ω
at 2.5A
97m
Ω
at 1.5A
163m
Ω
at 1.5A
-
-
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
Operating and Storage
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
FMMT
717
-12
-12
-5
-10
-2.5
FMMT
718
-20
-20
-5
-6
-1.5
FMMT
720
-40
-40
-5
-4
-1.5
-500
625
-55 to +150
FMMT
722
-70
-70
-5
-3
-1.5
FMMT
723
-100
-100
-5
-2.5
-1
UNIT
V
V
V
A
A
mA
mW
°C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
3 - 159
FMMT717
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
-12
-12
-5
TYP.
-35
-25
-8.5
-100
-100
-100
-10
-100
-110
-180
-0.9
-0.8
300
300
180
60
45
80
475
450
275
100
70
110
21
70
130
30
MHz
pF
ns
ns
-17
-140
-170
-220
-1.0
-1.0
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-10V
V
EB
=-4V
V
C ES
=-10V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-2.5A, I
B
=-50mA*
I
C
=-2.5A, I
B
=-50mA*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
V
CC
=-6V, I
C
=-2A
I
B1
=I
B2
=50mA
Emitter Cut-Off Current I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
Static Forward Current h
FE
Transfer
Ratio
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 160
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
SuperSOT Series
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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