epitex
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Peak Wavelength
(3) Emitting Area
(4) Element Dimension
(5) Chip Dimension
(6) Elements Number
4) Pad Metal & Dimension
(1) Front Side (Pad)
(2) Back Side (Die)
Figure of AR880-20
Opto-Device & Custom LED
20 Elements LED array
SPECIFICATION OF LED ARRAY
AR850-20
[INFRARED]
20 Element LED array
AR850-20
See figure
AlGaAs/GaAs
850nm typ.
320x420um as photomask
381 x 508um as photomask
7620 x 508um as photomask
20 Elements /Chip
Cathode Gold 127um square as photomask
Anode
Gold
Absolute Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation per Segment
P
D
Forward Current per Segment
I
F
Reverse Voltage per Segment
V
R
Operating Temperature
T
OPR
Storage Temperature
T
STG
Maximum Rated Value
220
125
5
-30 ~ +60
-55 ~ +90
Unit
mW
mA
V
°C
°C
Electro-Optical Characteristics
Item
Symbol Condition Minimum Typical Maximum
Forward Voltage per Segment
V
F
I
F
=100mA
1.60
1.80
Reverse Current
I
R
V
R
=5V
10
Leakage Current at each Segment
I
L
V
R
=5V
10
Output Power per Segment
Po
I
F
=100mA
15.0
22.0
Peak Wavelength
l
P
I
F
=100mA
840
850
855
Half Width
Dl
I
F
=100mA
40
Output Power of each LED is +/=30% of array output average.
Output Power of Element is calibrated by Photodyne #500
EPITEX INC. : 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan
Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com
Unit
V
uA
uA
mW
nm
nm
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