1GB Fully Buffered DIMM
参数名称 | 属性值 |
厂商名称 | ELPIDA |
零件包装代码 | DIMM |
包装说明 | DIMM, |
针数 | 240 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
访问模式 | DUAL BANK PAGE BURST |
其他特性 | AUTO/SELF REFRESH |
JESD-30 代码 | R-XDMA-N240 |
内存密度 | 19327352832 bi |
内存集成电路类型 | DRAM MODULE |
内存宽度 | 72 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 240 |
字数 | 268435456 words |
字数代码 | 256000000 |
工作模式 | SYNCHRONOUS |
组织 | 256MX72 |
封装主体材料 | UNSPECIFIED |
封装代码 | DIMM |
封装形状 | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY |
认证状态 | Not Qualified |
自我刷新 | YES |
最大供电电压 (Vsup) | 1.9 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | NO |
技术 | CMOS |
端子形式 | NO LEAD |
端子位置 | DUAL |
EBE11FD8AHFL-6E-E | EBE11FD8AHFT-6E-E | EBE11FD8AHFT-5C-E | EBE11FD8AHFT | EBE11FD8AHFL | EBE11FD8AHFL-5C-E | EBE11FD8AHFE | EBE11FD8AHFE-5C-E | EBE11FD8AHFE-6E-E | |
---|---|---|---|---|---|---|---|---|---|
描述 | 1GB Fully Buffered DIMM | 1GB Fully Buffered DIMM | 1GB Fully Buffered DIMM | 1GB Fully Buffered DIMM | 1GB Fully Buffered DIMM | 1GB Fully Buffered DIMM | 1GB Fully Buffered DIMM | 1GB Fully Buffered DIMM | 1GB Fully Buffered DIMM |
厂商名称 | ELPIDA | ELPIDA | ELPIDA | - | - | ELPIDA | - | ELPIDA | - |
零件包装代码 | DIMM | DIMM | DIMM | - | - | DIMM | - | DIMM | - |
包装说明 | DIMM, | DIMM, | DIMM, DIMM240,40 | - | - | DIMM, DIMM240,40 | - | DIMM, DIMM240,40 | - |
针数 | 240 | 240 | 240 | - | - | 240 | - | 240 | - |
Reach Compliance Code | unknow | unknown | unknown | - | - | unknown | - | unknow | - |
ECCN代码 | EAR99 | EAR99 | EAR99 | - | - | EAR99 | - | EAR99 | - |
访问模式 | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | - | - | DUAL BANK PAGE BURST | - | DUAL BANK PAGE BURST | - |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | - | - | AUTO/SELF REFRESH | - | AUTO/SELF REFRESH | - |
JESD-30 代码 | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 | - | - | R-XDMA-N240 | - | R-XDMA-N240 | - |
内存密度 | 19327352832 bi | 19327352832 bit | 19327352832 bit | - | - | 19327352832 bit | - | 19327352832 bi | - |
内存集成电路类型 | DRAM MODULE | DRAM MODULE | DRAM MODULE | - | - | DRAM MODULE | - | DRAM MODULE | - |
内存宽度 | 72 | 72 | 72 | - | - | 72 | - | 72 | - |
功能数量 | 1 | 1 | 1 | - | - | 1 | - | 1 | - |
端口数量 | 1 | 1 | 1 | - | - | 1 | - | 1 | - |
端子数量 | 240 | 240 | 240 | - | - | 240 | - | 240 | - |
字数 | 268435456 words | 268435456 words | 268435456 words | - | - | 268435456 words | - | 268435456 words | - |
字数代码 | 256000000 | 256000000 | 256000000 | - | - | 256000000 | - | 256000000 | - |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - | - | SYNCHRONOUS | - | SYNCHRONOUS | - |
组织 | 256MX72 | 256MX72 | 256MX72 | - | - | 256MX72 | - | 256MX72 | - |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | - | - | UNSPECIFIED | - | UNSPECIFIED | - |
封装代码 | DIMM | DIMM | DIMM | - | - | DIMM | - | DIMM | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - | RECTANGULAR | - | RECTANGULAR | - |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | - | - | MICROELECTRONIC ASSEMBLY | - | MICROELECTRONIC ASSEMBLY | - |
认证状态 | Not Qualified | Not Qualified | Not Qualified | - | - | Not Qualified | - | Not Qualified | - |
自我刷新 | YES | YES | YES | - | - | YES | - | YES | - |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | - | - | 1.9 V | - | 1.9 V | - |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | - | - | 1.7 V | - | 1.7 V | - |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | - | - | 1.8 V | - | 1.8 V | - |
表面贴装 | NO | NO | NO | - | - | NO | - | NO | - |
技术 | CMOS | CMOS | CMOS | - | - | CMOS | - | CMOS | - |
端子形式 | NO LEAD | NO LEAD | NO LEAD | - | - | NO LEAD | - | NO LEAD | - |
端子位置 | DUAL | DUAL | DUAL | - | - | DUAL | - | DUAL | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved