4-4 Schottky Barrier Diodes
Low IR “E Series”
●Surface-Mount
V
RM
(V)
30
40
I
F
(AV)
(A)
2.0
2.0
Package
Axial
(Body Diameter/Lead Diameter)
Surface-Mount (SJP)
Surface-Mount (SJP)
Part Number
SJPE-H3*
SJPE-H4
I
FSM
(A)
50Hz
Single Half Sine Wave
40
40
T
j
(
°
C)
T
stg
(
°
C)
V
F
(V)
max
0.55
0.6
I
F
(A)
2.0
2.0
I
R
(mA)
V
R
=V
RM
max
0.2
0.05
I
R
(H)
(mA)
V
R
=V
RM
max
70
20
T
j
(
°
C)
150(Ta)
150
Rth(j-l)
Rth(j-c)
(
°
C/W)
20
20
Mass
(g)
0.072
0.072
-40 to +150
-40 to +150
*Under development
●Thru-Hole
V
RM
(V)
I
F
(AV)
(A)
20
30
10
15
20
100
20
30
30
30
10
20
150
20
30
Package
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-3PF(Center-tap)
TO-220F(Center-tap)
TO-262
TO-3PF(Center-tap)
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-3PF(Center-tap)
TO-220F(Center-tap)
Part Number
FMEN-2208
FMEN-2308
FMEN-210A
FMEN-215A*
FMEN-220A
FMEN-420A
FMEN-230A
MPEN-230AF
FMEN-430A
FMEN-210B
FMEN-220B
FMEN-420B
FMEN-230B
I
FSM
(A)
50Hz
Single Half Sine Wave
120
150
100
100
120
120
150
150
150
100
120
120
150
T
j
(
°
C)
T
stg
(
°
C)
V
F
(V)
max
0.76
0.765
0.85
0.85
0.85
0.85
0.85
0.90
0.85
0.92
0.92
0.85
0.92
I
F
(A)
10
15
5.0
7.5
10
10
15
15
15
5.0
10
10
15
I
R
(mA)
V
R
=V
RM
max
0.2
0.3
0.1
0.15
0.2
0.2
0.3
0.25
0.3
0.1
0.2
0.2
0.3
I
R
(H)
(mA)
V
R
=V
RM
max
100
150
50
75
100
100
150
125
150
25
50
100
75
T
j
(
°
C)
150
150
150
150
150
150
150
150
150
150
150
150
150(Ta)
Rth(j-l)
Rth(j-c)
(
°
C/W)
4.0
4.0
4.0
4.0
4.0
2.0
4.0
1.5
2.0
4.0
4.0
2.0
4.0
Mass
(g)
2.1
2.1
2.1
2.1
2.1
6.5
2.1
1.55
6.5
2.1
2.1
6.5
2.1
80
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
*Under development
Low VF/Low IR Balance “J Series”
●Surface-Mount
V
RM
(V)
I
F
(AV)
(A)
1.0
30
2.0
3.0
Package
Surface-Mount (SJP)
Surface-Mount (SJP)
Surface-Mount (SJP)
Part Number
SJPJ-D3
SJPJ-H3*
SJPJ-L3
I
FSM
(A)
50Hz
Single Half Sine Wave
30
50
60
T
j
(
°
C)
T
stg
(
°
C)
V
F
(V)
max
0.45
0.45
0.45
I
F
(A)
1.0
2.0
3.0
I
R
(mA)
V
R
=V
RM
max
0.1
0.2
0.3
I
R
(H)
(mA)
V
R
=V
RM
max
35
70
150
T
j
(
°
C)
150
150
150
Rth(j-l)
Rth(j-c)
(
°
C/W)
20
20
20
Mass
(g)
0.072
0.072
0.072
-40 to +150
-40 to +150
-40 to +150
*Under development
●Thru-Hole
V
RM
(V)
I
F
(AV)
(A)
3.0
30
10
30
Package
Axial
(Body Diameter/Lead Diameter)
Axial(
φ
6.5/
φ
1.4)
TO-220F(Center-tap)
TO-220F(Center-tap)
Part Number
RJ 43
FMJ-23L
FMJ-2303
I
FSM
(A)
50Hz
Single Half Sine Wave
50
100
150
T
j
(
°
C)
T
stg
(
°
C)
V
F
(V)
max
0.45
0.45
0.48
I
F
(A)
3.0
5.0
15
I
R
(mA)
V
R
=V
RM
max
3.0
5.0
15
I
R
(H)
(mA)
V
R
=V
RM
max
100
175
500
T
j
(
°
C)
150
150(Ta)
150
Rth(j-l)
Rth(j-c)
(
°
C/W)
8.0
4.0
4.0
Mass
(g)
1.2
2.1
2.1
-40 to +150
-40 to +150
-40 to +150
Diodes
197
Package Type (Dimensions)
• No. 1 Surface-Mount (SJP)
4.5
±0.2
• No. 2 Surface-Mount (D pack)
0.16
•
No. 3
Surface-Mount (D pack)
Center-tap
0.16
1.37
0.7
5.0
6.5
±0.4
5.4
±0.4
1.7
±0.5
2.3
±0.4
0.55
±0.1
5.4
4.1
2.9
0.7
1.37
6.5
±0.4
5.4
±0.4
1.7
±0.5
2.3
±0.4
0.55
±0.1
5.4
4.1
2.9
2.6
±0.2
5.5
±0.4
a.
b.
5.0
5.5
±0.4
a.
b.
1.2max
c.
4.9
0 to 0.25
2.5
±0.4
1.2max
c.
4.9
0 to 0.25
0.05
–0.05
2.5
±0.4
2.15
±0.2
0.5
±0.2
2.29
±0.5
2.29
±0.5
0.55
±0.1
1
NC
2
(Common to heatsink)
Cathode
3
Anode
1
2.29
±0.5
2.29
±0.5
0.5
±0.2
0.8
±0.1
1.15
±0.1
0.8
±0.1
a: Part Number
b: Polarity
c: Lot No.
0.8
±0.1
1.15
±0.1
0.8
±0.1
a: Part Number
b: Polarity
c: Lot No.
+0.1
0.55
±0.1
1.5 max
2
3
1
Anode
2
(Common to heatsink)
3
1.3
±0.4
+0.4
5.0
–0.1
1.3
±0.4
1.5
±0.2
1
2
3
1.5 max
Cathode(Common) Anode
•
No. 4
Surface-Mount
(TO263)
•
No. 5
Surface-Mount
(TO220S)
MPL-102S, MP2-202S, MPL-1036
•
No. 6
Surface-Mount (
TO220S)
4.44
±
0.2
(1.4)
9.9
±
0.2
(0.4)
(15
°
)
1.2
±
0.2
(3
°
)
4.5
±
0.2
1.3
±
0.1
(1.4)
(5)
4.44
±
0.2
1.3
±
0.2
10.2
±
0.3
1.3
±
0.2
(0.45)
(4.6)
(3
°
)
9.2
±
0.2
15.3
±
0.3
10.0
±
0.2
0.1
±
0.15
b
1
2
3
(1.5)
8.6
±
0.3
(
φ
1.5 Dp0.2)
10.0
–
0.5
9.1
±
0.3
10.5
+0.3
–0.5
+
0.3
10.2
±
0.3
a
c
1.27
±
0.2
(1.5)
0.1
–
0.1
+
0.2
2.59
±
0.2
0.4
±
0.1
a: Part Number
b: Polarity
c: Lot No.
1.4
±
0.2
4.9
±
0.2
1.27
±
0.1
0.8
±
0.1
2.54TYP
2.54TYP
2.0
±
0.1
2.4
±
0.2
(R0.3)
2.54
±
0.3
0.5
±
0.1
(1.2)
1.34
+0.2
–0.1
(0.75)
A
2.54
±
0.1
(Measured at the root)
0.4
±
0.1
2.54
±
0.1
(Measured at the root)
1.2
±
0.2
2.54
±
0.5
q
w
e
2.54
±
0.5
3.0
–
0.5
+
0.3
0.86
+0.2
–0.1
0.86
–
0.1
+
0.2
*w is common to the frame.
q
w
e
•
No. 7
Surface-Mount (
TO220S) Center-tap
•
No. 8
Surface-Mount (
SZ-10)
•
No. 9 Axial (
φ
2.4/
φ
0.6)
(1.4)
10.2
±
0.3
4.44
±
0.2
1.3
±
0.2
10.0
±
0.3
5.0
±
0.3
(4.6)
8.5
±
0.5
10
±
0.3
5
±
0.3
2
±
0.3
φ
0.57
±0.02
10.0
–
0.5
+
0.3
(1.5)
8.6
±
0.3
a
b
c
1.27
±
0.2
Cathode band
(1.5)
9.6
±
0.5
13.5
±
0.3
15.5
±
0.5
(9.75)
10
±
0.3
+
0.2
0.1
–
0.1
2.59
±
0.2
0.4
±
0.1
(0.4)
5.0
±
0.3
+
0.3
1.1
±
0.5
2.54
±
0.5
q
w
e
2.54
±
0.5
a: Part Number
b: Polarity
c: Lot No.
(2.5)
2.7
±
0.3
7.2
±
0.5
3
±
0.5
q
w
e
•
No. 10 Axial (
φ
2.7/
φ
0.6)
φ
0.6
±0.05
•
No. 11 Axial (
φ
2.7/
φ
0.6)
Silicon Varistors (Symmetrical)
2.0
±
0.5
1.2
±
0.2
3.0
–
0.5
0.86
–
0.1
+
0.2
3.9
±
0.5
50.0
±1.0
2.9
±0.1
φ
2.4
±0.1
•
No. 12 Axial (
φ
2.7/
φ
0.78)
φ
0.78
±0.05
φ
0.6
Cathode band
Cathode band
62.3
±0.7
5.0
±0.2
62.3
±1.0
5.0
±0.2
62.3
φ
2.7
±0.2
φ
2.7
±0.2
5.0
±0.2
±0.7
φ
2.7
±0.2
200
Diodes
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