General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC (A): 2A; HFE Min: 70; HFE Max: 240; VCE (V): 2V; IC (mA): 500mA; VCE(SAT) (V): 0.5V; IC (mA)1: 1000mA; IB (mA): 50mA; FT Min (MHz): 120+ MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89
参数名称 | 属性值 |
厂商名称 | Galaxy Microelectronics |
零件包装代码 | SOT-89 |
包装说明 | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code | unknown |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 2 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 40 |
JESD-30 代码 | R-PSSO-F3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
表面贴装 | YES |
端子形式 | FLAT |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 120 MHz |
Base Number Matches | 1 |
类别 | |
极性 | PNP |
V(BR)CEO (V) min. | 50 |
IC (A) | 2 |
hFE min | 70 |
hFE max | 240 |
Condition1_VCE (V) | 2 |
Condition1_IC (mA) | 500 |
VCE (sat) (V) | 0.5 |
Condition2_IC (mA) | 1000 |
Condition2_IB (mA) | 50 |
fT (MHz) min. | 120(typ) |
PD (W) max. | 0.5 |
AEC Qualified | No |
最高工作温度 | 150 |
最低工作温度 | -55 |
MSL等级 | 3 |
是否无铅 | Yes |
符合Reach | Yes |
符合RoHS | Yes |
ECCN代码 | EAR99 |
Package Outlines | SOT-89 |
KTA1666 | KTA1666O | KTA1666Y | |
---|---|---|---|
描述 | General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC (A): 2A; HFE Min: 70; HFE Max: 240; VCE (V): 2V; IC (mA): 500mA; VCE(SAT) (V): 0.5V; IC (mA)1: 1000mA; IB (mA): 50mA; FT Min (MHz): 120+ MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89 | Small Signal Bipolar Transistor, | Small Signal Bipolar Transistor, |
厂商名称 | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics |
包装说明 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code | unknown | unknown | unknown |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | 2 A | 2 A | 2 A |
集电极-发射极最大电压 | 50 V | 50 V | 50 V |
配置 | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 40 | 70 | 120 |
JESD-30 代码 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | PNP | PNP |
表面贴装 | YES | YES | YES |
端子形式 | FLAT | FLAT | FLAT |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 120 MHz | 120 MHz | 120 MHz |
Base Number Matches | 1 | 1 | 1 |
最高工作温度 | 150 | 150 °C | 150 °C |
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