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Rep rderin Techn
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(Se nta
1999
SI
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October
o
or c 8-INTE
8
1-8
®
HA-5221/883
Low Noise, Wideband,
Precision Operational Amplifier
Description
The HA-5221/883 is a high performance, dielectrically isolated,
monolithic op amp, featuring precision DC characteristics while
providing excellent AC characteristics. Designed for audio,
video, and other demanding applications, noise (3.6nV/√Hz at
1kHz typ), total harmonic distortion (<0.005% typ), and DC
errors are kept to a minimum.
The precision performance is shown by low offset voltage
(0.3mV typ), low bias currents (40nA typ), low offset currents
(15nA typ), and high open loop gain (128dB typ). The combi-
nation of these excellent DC characteristics with fast settling
time (0.4µs typ) make the HA-5221/883 ideally suited for
precision signal conditioning.
The unique design of the HA-5221/883 gives this device out-
standing AC characteristics, including high unity gain band-
width (40MHz typ) and high slew rate (37V/µs typ), not
normally associated with precision op amps. Other key spec-
ifications include high CMRR (95dB typ) and high PSRR
(100dB typ). The combination of these specifications will
allow the HA-5221/883 to be used in RF signal conditioning
as well as video amplifiers.
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Gain Bandwidth Product . . . . . . . . . . . . . .100MHz (Min)
• Unity Gain Bandwidth . . . . . . . . . . . . . . . . .30MHz (Min)
40MHz (Typ)
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . . .25V/µs (Min)
37V/µs (Typ)
• Low Offset Voltage . . . . . . . . . . . . . . . . . .0.75mV (Max)
0.30mV (Typ)
• High Open Loop Gain . . . . . . . . . . . . . . . . . 106dB (Min)
128dB (Typ)
• Low Voltage Noise (at 1kHz) . . . . . . . . .5.8nV/√Hz (Max)
3.6nV/√Hz (Typ)
• Low Current Noise (at 1kHz) . . . . . . . . 2.0pA/√Hz (Max)
1.4pA/√Hz (Typ)
• High Output Current . . . . . . . . . . . . . . . . .
±30mA
(Min)
±56mA
(Typ)
• Low Supply Current. . . . . . . . . . . . . . . . . . . 10mA (Max)
8mA (Typ)
Ordering Information
OBSOLETE
PART
NUMBER
HA4-5221/883
HA7-5221/883
SMD NO.
5962-9163401M2A
5962-9163401MPA
TEMP
RANGE
(
o
C)
-55 to 125
-55 to 125
PACKAGE
20 Ld CLCC
8 Ld CERDIP
Applications
• Precision Test Systems
• Active Filtering
• Small Signal Video
• Accurate Signal Processing
• RF Signal Conditioning
Pinouts
HA-5221/883
(CERDIP)
TOP VIEW
HA-5221/883
(CLCC)
TOP VIEW
+BAL
-BAL
NC
NC
NC
18
17
-
+
15
14
9 10 11 12 13
NC
V-
NC
NC
NC
16
-BAL
-IN
+IN
V-
1
2
3
4
-
+
8
7
6
5
+ BAL
V+
NC
OUT
NC
-IN
NC
+IN
NC
4
5
6
7
8
3
2
1 20 19
NC
V+
NC
OUT
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
1
File Number
3716.1
HA-5221/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 36V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current (Pulsed at 1ms, 10% Duty Cycle). . . . . 100mA
Continuous Output Current. . . . . . . . . . . . . . Short Circuit Protected
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
θ
JC
Thermal Resistance
θ
JA
o
C/W
CerDIP Package . . . . . . . . . . . . . . . . . . . 110
27
o
C/W
o
Ceramic LCC Package . . . . . . . . . . . . . .
64 C/W
13
o
C/W
Metal Can Package . . . . . . . . . . . . . . . . . 148
o
C/W
67
o
C/W
o
C
Package Power Dissipation Limit at +75
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91W
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Package Power Dissipation Derating Factor Above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.1mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.6mW/
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.8mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . ±10V
to
±15V
V
INCM
≤
1/2 (V+ - V-)
R
L
≥
1kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
LOAD
= 1kΩ , V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Input Bias Current
+I
B
V
CM
= 0V,
+R
S
= 100.1kΩ,
-R
S
= 100Ω
V
CM
= 0V, +R
S
= 100Ω,
-R
S
= 100.1kΩ
V
CM
= 0V,
+R
S
= 100.1kΩ,
-R
S
= 100.1kΩ
V+ = +3V, V- = -27V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-CMR
V+ = +27V, V- = -3V
1
2, 3
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V
4
5, 6
-A
VOL
V
OUT
= 0V and -10V
4
5, 6
Common Mode
Rejection Ratio
+CMRR
∆V
CM
= +10V,
V+ = +5V, V- = -25V,
V
OUT
= -10V
∆V
CM
= -10V,
V+ = +25V, V- = -5V,
V
OUT
= +10V
R
L
= 1kΩ
1
2, 3
1
2, 3
4
5, 6
-V
OUT
R
L
= 1kΩ
4
5, 6
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-0.75
-1.5
-80
-200
-80
-200
-50
-150
12
12
-
-
106
100
106
100
88
86
88
86
12.0
11.5
-
-
MAX
0.75
1.5
80
200
80
200
50
150
-
-
-12
-12
-
-
-
-
-
-
-
-
-
-
-12.0
-11.5
UNITS
mV
mV
nA
nA
nA
nA
nA
nA
V
V
V
V
dB
dB
dB
dB
dB
dB
dB
dB
V
V
V
V
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
-I
B
Input Offset Current
I
IO
Common Mode Range
+CMR
-CMRR
Output Voltage Swing
+V
OUT
2
HA-5221/883HA-5221/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
LOAD
= 1kΩ , V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
5, 6
-I
OUT
V
OUT
= -10V, R
L
= 1kΩ
4
5, 6
Quiescent Power Supply
Current
+I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply
Rejection Ratio
+PSRR
∆V
SUP
= 10V,
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
∆V
SUP
= 10V,
V+ = +15V, V- = -20V,
V+ = +15V, V- = -10V
Note 1
1
2, 3
1
2, 3
1
2, 3
-V
IO
Adj
Note 1
1
2, 3
NOTE:
1. Offset adjustment range is [V
IO
(Measured
±1mV]
minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
30
30
-
-
-
-
-10
-11
90
86
90
86
V
IO
-1
V
IO
-1
V
IO
+1
V
IO
+1
MAX
-
-
-30
-30
10
11
-
-
-
-
-
-
-
-
-
-
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
mV
mV
mV
mV
PARAMETERS
Output Current
SYMBOL
+I
OUT
CONDITIONS
V
OUT
= +10V, R
L
= 1kΩ
-PSRR
Offset Voltage
Adjustment
+V
IO
Adj
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC specifications in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 1kΩ, C
LOAD
= 50pF, Unless Otherwise Specified.
LIMITS
PARAMETERS
Input Noise Voltage
Density
SYMBOL
E
N
CONDITIONS
R
S
= 0Ω, f
O
= 10Hz
R
S
= 0Ω, f
O
= 100Hz
R
S
= 0Ω, f
O
= 1kHz
Input Noise Current
Density
I
N
R
S
= 500kΩ, f
O
= 10Hz
R
S
= 500kΩ, f
O
= 100Hz
R
S
= 500kΩ, f
O
= 1kHz
Gain Bandwidth Product
GBWP
V
OUT
= 200mV
P-P
,
f
O
=
100kHz
V
OUT
= 200mV
V
OUT
=
±2.5V
C
L
= 50pF
NOTES
1, 5
1, 5
1, 5
1, 5
1, 5
1, 5
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
1
+25
o
C
-55
o
C to +125
o
C
Slew Rate
±SR
1
-55
o
C to +125
o
C
MIN
-
-
-
-
-
-
100
90
30
25
25
MAX
24.0
8.0
5.8
11.5
6.0
2.0
-
-
-
-
-
UNITS
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
MHz
MHz
MHz
MHz
V/µs
Unity Gain Bandwidth
UGBW
3
HA-5221/883HA-5221/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 1kΩ, C
LOAD
= 50pF, Unless Otherwise Specified.
LIMITS
PARAMETERS
Full Power Bandwidth
Minimum Closed Loop
Stable Gain
Rise and Fall Time
Overshoot
SYMBOL
FPBW
CLSG
t
R,
t
F
±OS
CONDITIONS
V
PEAK
= 10V
R
L
= 1kΩ, C
L
= 50pF
V
OUT
=
±100mV
V
OUT
=
±100mV
NOTES
1, 2
1
1, 4
1
TEMPERATURE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
Power Consumption
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
5. Input Noise Voltage Density and Input Noise Current Density limits are based on characterization data.
PC
V
OUT
= 0V, I
OUT
=
0mA
1, 3
-55
o
C to +125
o
C
MIN
398
1
-
-
-
-
MAX
-
-
20
25
30
660
UNITS
kHz
V/V
ns
%
%
mW
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
4
HA-5221/883
Die Characteristics
DIE DIMENSIONS:
72 x 94 x 19 mils
±
1 mils
1840 x 2400 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Å
±
2k
Å
Nitride Thickness: 3.5k
Å
±
1.5k
Å
WORST CASE CURRENT DENSITY:
4.2 x 10
4
A/cm
2
SUBSTRATE POTENTIAL (Powered Up):
V-
TRANSISTOR COUNT:
62
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5221/883
V-
+IN
-IN
-BAL
+BAL
OUT
V+
5
嵌入式系统
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