SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 10Ω
7
ZVN3310F
S
D
G
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVP3310F
MF
SOT23
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
100
2
±
20
330
-55 to +150
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
3 typ
5 typ
4 typ
5 typ
100
40
15
5
5
7
6
7
500
10
100
0.8
2.4
20
1
50
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=500mA
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=500mA
V
DS
=25V, I
D
=500mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 396
ZVN3310F
TYPICAL CHARACTERISTICS
I
D(On)
-On-State Drain Current (Amps)
160
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
V
GS=
10V
9V
8V
7V
6V
5V
4V
3V
g
fs
-Transconductance (mS)
V
DS=
25V
120
80
40
0
0
0.2
0.4
0.6
0.8
1.0
1.2
I
D
- Drain Current (Amps)
V
DS
- Drain Source
Voltage (Volts)
Transconductance v drain current
Saturation Characteristics
V
DS
=
20V 50V
I
D=
0.6A
V
GS
-Gate Source Voltage (Volts)
50
16
14
12
10
8
6
4
2
0
0
0.2
0.4
0.6
0.8
80V
C-Capacitance (pF)
40
30
C
iss
20
10
0
0
10
20
30
40
C
oss
C
rss
50
1.0
1.2
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
R
DS(ON)
-Drain Source Resistance
(Ω)
100
2.4
Normalised R
DS(on)
and V
GS(th)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
D=-
0.5A
10
I
D=
1A
0.5A
0.2A
Dr
e
rc
ou
-S
ain
s
Re
ist
c
an
D
eR
)
on
S(
Gate Thresh
old Voltag
eV
GS(th)
1
1
10
20
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
V
GS
-Gate Source Voltage
(Volts)
T-Temperature (C°)
On-resistance vs gate-source voltage
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3 - 397
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