NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 56; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 22K Ohm; R2 (KΩ): 22K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Galaxy Microelectronics |
| Reach Compliance Code | unknown |
| 其他特性 | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 56 |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.2 W |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| Base Number Matches | 1 |
| 类别 | |
| 极性 | NPN |
| V(BR)CEO (V) min. | 50 |
| IC Continuous (mA) | 30 |
| Gi | 56 |
| VO(ON) (V) | 0.3 |
| fT MHz | 250(typ) |
| R1 (kΩ) | 22 |
| R2 (kΩ) | 22 |
| R1/R2 typ | 1 |
| Vi(off) (V) max. | 0.5 |
| Vi(on) (V) min. | 3 |
| PD (mW) | 200 |
| AEC Qualified | No |
| 最高工作温度 | 150 |
| 最低工作温度 | -55 |
| MSL等级 | 1 |
| 是否无铅 | Yes |
| 符合Reach | Yes |
| 符合RoHS | Yes |
| ECCN代码 | EAR99 |
| Package Outlines | SOT-23 |
| DTC124ECA | 060316VA104J4Z2A | DTC114ECA | DTC143ECA | |
|---|---|---|---|---|
| 描述 | NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 56; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 22K Ohm; R2 (KΩ): 22K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23 | Automotive MLCC | 50V,50mA,NPN Bipolar Digital Transistor, Diodes, NPN, 50V, 50mA, 30, 0.3V, 250(typ) | 50V,100mA,NPN Bipolar Digital Transistor, Diodes, NPN, 50V, 100mA, 20, 0.3V, 250(typ) |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 |
| 厂商名称 | Galaxy Microelectronics | - | Galaxy Microelectronics | Galaxy Microelectronics |
| Reach Compliance Code | unknown | - | unknown | unknown |
| 其他特性 | BUILT IN BIAS RESISTANCE RATIO IS 1 | - | BUILT IN BIAS RESISTANCE RATIO IS 1 | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A | - | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | - | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 56 | - | 30 | 20 |
| JESD-30 代码 | R-PDSO-G3 | - | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | - | 1 | 1 |
| 端子数量 | 3 | - | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | - | NPN | NPN |
| 最大功率耗散 (Abs) | 0.2 W | - | 0.2 W | 0.2 W |
| 表面贴装 | YES | - | YES | YES |
| 端子形式 | GULL WING | - | GULL WING | GULL WING |
| 端子位置 | DUAL | - | DUAL | DUAL |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | - | 250 MHz | 250 MHz |
| 极性 | NPN | - | NPN | NPN |
| V(BR)CEO (V) min. | 50 | - | 50 | 50 |
| IC Continuous (mA) | 30 | - | 50 | 100 |
| Gi | 56 | - | 30 | 20 |
| VO(ON) (V) | 0.3 | - | 0.3 | 0.3 |
| fT MHz | 250(typ) | - | 250(typ) | 250(typ) |
| R1 (kΩ) | 22 | - | 10 | 4.7 |
| R2 (kΩ) | 22 | - | 10 | 4.7 |
| R1/R2 typ | 1 | - | 1 | 1 |
| Vi(off) (V) max. | 0.5 | - | 0.5 | 0.5 |
| Vi(on) (V) min. | 3 | - | 3 | 3 |
| PD (mW) | 200 | - | 200 | 200 |
| AEC Qualified | No | - | No | No |
| 最高工作温度 | 150 | - | 150 | 150 |
| 最低工作温度 | -55 | - | -55 | -55 |
| MSL等级 | 1 | - | 1 | 1 |
| 是否无铅 | Yes | - | Yes | Yes |
| 符合Reach | Yes | - | Yes | Yes |
| 符合RoHS | Yes | - | Yes | Yes |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 |
| Package Outlines | SOT-23 | - | SOT-23 | SOT-23 |
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