MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
1–1.3 Watt DO-41 Glass
Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
BZX85C3V3RL
SERIES
1–1.3 WATT
DO-41 GLASS
1 WATT
ZENER REGULATOR
DIODES
3.3–100 VOLTS
One Watt Hermetically Sealed Glass
Silicon Zener Diodes
Specification Features:
•
Complete Voltage Range — 3.3 to 100 Volts
•
DO-41 Package
•
Double Slug Type Construction
•
Metallurgically Bonded Construction
•
Oxide Passivated Die
Mechanical Characteristics:
CASE:
Double slug type, hermetically sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from
case for 10 seconds
FINISH:
All external surfaces are corrosion resistant with readily solderable leads
POLARITY:
Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION:
Any
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Seoul, Korea
MAXIMUM RATINGS
Rating
DC Power Dissipation @ TA = 50°C
Derate above 50°C
Operating and Storage Junction Temperature Range
Symbol
PD
TJ, Tstg
CASE 59-03
DO-41
GLASS
Value
1
6.67
– 65 to +200
Unit
Watt
mW/°C
°C
1.25
PD, MAXIMUM DISSIPATION (WATTS)
L = 1″
L = 1/8″
L = 3/8″
0.75
L = LEAD LENGTH
TO HEAT SINK
1
0.5
0.25
0
20
40
60
80 100 120 140 160
TL, LEAD TEMPERATURE (°C)
180
200
Figure 1. Power Temperature Derating Curve
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-1
GENERAL DATA — 500 mW DO-35 GLASS
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) (VF = 1.2 V Max, IF = 200 mA for all types.)
Zener Voltage
VZT (V)
(Notes 2 and 3)
Type
T
(Note 1)
BZX85C3V3RL
BZX85C3V6RL
BZX85C3V9RL
BZX85C4V3RL
BZX85C4V7RL
BZX85C5V1RL
BZX85C5V6RL
BZX85C6V2RL
BZX85C6V8RL
BZX85C7V5RL
BZX85C8V2RL
BZX85C9V1RL
BZX85C10RL
BZX85C12RL
BZX85C13RL
BZX85C15RL
BZX85C16RL
BZX85C18RL
BZX85C22RL
BZX85C24RL
BZX85C27RL
BZX85C30RL
BZX85C33RL
BZX85C36RL
BZX85C43RL
BZX85C47RL
BZX85C56RL
BZX85C62RL
BZX85C75RL
BZX85C82RL
BZX85C100RL
VZ
Min
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
11.4
12.4
13.8
15.3
16.8
20.8
22.8
25.1
28
31
34
40
44
52
58
70
77
96
VZ
Max
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
12.7
14.1
15.6
17.1
19.1
23.3
25.6
28.9
32
35
38
46
50
60
66
80
87
106
Zener Impedance
ZZ (ohms)
(Note 4)
Max
at IZT
20
15
15
13
13
10
7
4
3.5
3
5
5
7
9
10
15
15
20
25
25
30
30
35
40
50
90
120
125
150
200
350
Max at IZ
(mA)
400
500
500
500
600
500
400
300
300
200
200
200
200
350
400
500
500
500
600
600
750
1000
1000
1000
1000
1500
2000
2000
2000
3000
3000
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
VR (V)
1
1
1
1
1.5
2
2
3
4
4.5
5
6.5
7
8.4
9.1
10.5
11
12.5
15.5
17
19
21
23
25
30
33
39
43
51
56
68
Leakage
Current
(µA)
IR
Max
60
30
5
3
3
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Surge
Current
TA = 25 C
25°C
ir (mA)
(Note 5)
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
380
344
304
285
250
205
190
170
150
135
125
110
95
80
70
60
55
45
Test
Current
C
t
IZT
(mA)
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
15
15
15
10
10
8
8
8
8
6
4
4
4
4
2.7
2.7
NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION
The type numbers listed have zener voltage min/max limits as shown. Device tolerance of
±2%
are indicated by a “B” instead of “C.”
NOTE 2. SPECIALS AVAILABLE INCLUDE:
Nominal zener voltages between the voltages shown and tighter voltage tolerances.
For detailed information on price, availability, and delivery, contact your nearest Motorola rep-
resentative.
NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT
VZ is measured after the test current has been applied to 40
±
10 msec., while maintaining
the lead temperature (TL) at 30°C
±
1°C, 3/8″ from the diode body.
NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from the 1 kHz cycle ac voltage, which results when an ac
current having an rms value equal to 10% of the dc zener current (IZT) or (IZK) is superim-
posed on IZT or IZK.
NOTE 5. SURGE CURRENT (ir) NON-REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non-repetitive, re-
verse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second dura-
tion superimposed on the test current IZT. However, actual device capability is as described
in Figure 5 of General Data DO-41 glass.
500 mW DO-35 Glass Data Sheet
6-2
Motorola TVS/Zener Device Data
GENERAL DATA — 500 mW DO-35 GLASS
a. Range for Units to 12 Volts
θV
Z , TEMPERATURE COEFFICIENT (mV/°C)
θV
Z , TEMPERATURE COEFFICIENT (mV/°C)
+12
+10
+8
+6
+4
+2
RANGE
0
–2
–4
2
3
4
5
6
7
8
9
VZ, ZENER VOLTAGE (VOLTS)
10
11
12
VZ @ IZT
100
70
50
30
20
10
7
5
3
2
1
10
20
30
50
VZ, ZENER VOLTAGE (VOLTS)
70
100
RANGE
VZ @ IZT
b. Range for Units to 12 to 100 Volts
Figure 2. Temperature Coefficients
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
θ
JL , JUNCTION-TO-LEAD THERMAL RESISTANCE (mV/°C/W)
150
125
100
75
50
25
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
L, LEAD LENGTH TO HEAT SINK (INCHES)
θV
Z , TEMPERATURE COEFFICIENT (mV/°C)
175
+6
VZ @ IZ
TA = 25°C
20 mA
+4
+2
0
0.01 mA
–2
–4
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE:
CHANGES IN ZENER CURRENT DO NOT
NOTE:
EFFECT TEMPERATURE COEFFICIENTS
3
4
5
6
7
8
VZ, ZENER VOLTAGE (VOLTS)
Figure 3. Typical Thermal Resistance
versus Lead Length
100
70
50
30
20
10
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
PW, PULSE WIDTH (ms)
10
10% DUTY CYCLE
20% DUTY CYCLE
5% DUTY CYCLE
Figure 4. Effect of Zener Current
Ppk , PEAK SURGE POWER (WATTS)
11 V–100 V NONREPETITIVE
3.3 V–10 V NONREPETITIVE
RECTANGULAR
WAVEFORM
TJ = 25°C PRIOR TO
INITIAL PULSE
20
50
100
200
500
1000
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
Figure 5. Maximum Surge Power
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-3
GENERAL DATA — 500 mW DO-35 GLASS
Z Z , DYNAMIC IMPEDANCE (OHMS)
VZ = 2.7 V
47 V
27 V
Z Z , DYNAMIC IMPEDANCE (OHMS)
1000
500
200
100
50
20
10
5
2
1
0.1
0.2
0.5
TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
1000
700
500
200
100
70
50
20
10
7
5
2
1
IZ = 1 mA
5 mA
20 mA
TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
6.2 V
1
2
5
10
IZ, ZENER CURRENT (mA)
20
50
100
1
2
3
5
7 10
20 30
VZ, ZENER CURRENT (mA)
50
70 100
Figure 6. Effect of Zener Current
on Zener Impedance
Figure 7. Effect of Zener Voltage
on Zener Impedance
10000
7000
5000
2000
1000
700
500
200
100
70
50
I R , LEAKAGE CURRENT (µ A)
20
10
7
5
2
1
0.7
0.5
+125°C
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
14
15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
+25°C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
400
300
200
0 V BIAS
C, CAPACITANCE (pF)
100
1 V BIAS
50
20
10
8
4
1
2
5
10
20
VZ, NOMINAL VZ (VOLTS)
50
100
50% OF BREAKDOWN BIAS
Figure 9. Typical Capacitance versus VZ
1000
500
I F , FORWARD CURRENT (mA)
200
100
50
20
10
5 150°C
2
1
0.4
0.5
75°C
MINIMUM
MAXIMUM
25°C
0°C
0.6
0.7
0.8
0.9
1
1.1
VF, FORWARD VOLTAGE (VOLTS)
Figure 8. Typical Leakage Current
Figure 10. Typical Forward Characteristics
500 mW DO-35 Glass Data Sheet
6-4
Motorola TVS/Zener Device Data
GENERAL DATA — 500 mW DO-35 GLASS
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL =
θ
LAPD + TA.
θ
LA is the lead-to-ambient thermal resistance (°C/W) and PD is
the power dissipation. The value for
θ
LA will vary and depends
on the device mounting method.
θ
LA is generally 30 to 40°C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of TL, the junction temperature may be deter-
mined by:
TJ = TL +
∆T
JL.
∆T
JL is the increase in junction temperature above the lead
temperature and may be found as follows:
∆T
JL =
θ
JLPD.
θ
JL may be determined from Figure 3 for dc power condi-
tions. For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(∆TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
∆V
=
θ
VZ
∆T
J.
θ
VZ, the zener voltage temperature coefficient, is found from
Figure 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Surge limitations are given in Figure 5. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be ex-
tremely high in small spots, resulting in device degradation
should the limits of Figure 5 be exceeded.
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-5
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