IS62LV256
IS62LV256
32K x 8 LOW VOLTAGE STATIC RAM
DESCRIPTION
The
ICSI
IS62LV256 is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using
ICSI
's
high-performance CMOS double-metal technology.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
10 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (CE) input and an active LOW Output Enable (OE)
input. The active LOW Write Enable (WE) controls both writing
and reading of the memory.
The IS62LV256 is pin compatible with other 32K x 8 SRAMs
in 300mil DIP and SOJ, 330mil SOP, and 8*13.4mm TSOP-1
packages.
FEATURES
• Access time: 45, 70, 100 ns
• Low active power: 70 mW
• Low standby power
— 45 µW CMOS standby
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
256 X 1024
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR006-0B
1
IS62LV256
PIN CONFIGURATION
28-Pin DIP, SOJ and SOP
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PIN CONFIGURATION
8x13.4mm TSOP-1
PIN DESCRIPTIONS
A0-A14
CE
OE
WE
I/O0-I/O7
Vcc
GND
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Input/Output
Power
Ground
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High-Z
High-Z
D
OUT
D
IN
Vcc Current
I
SB
1
, I
SB
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +4.6
–55 to +125
–65 to +150
0.5
20
Unit
V
°C
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2
Integrated Circuit Solution Inc.
SR006-0B
IS62LV256
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
3.3V ± 5%
3.3V ± 5%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND < V
IN
< V
CC
GND < V
OUT
< V
CC
, Outputs Disabled
Com.
Ind.
Com.
Ind.
Test Conditions
V
CC
= Min., I
OH
= –1.0 mA
V
CC
= Min., I
OL
= 2.1 mA
Min.
2.4
—
2.2
–0.3
–2
–5
–2
–5
Max.
—
0.4
V
CC
+ 0.3
0.8
2
5
2
5
Unit
V
V
V
V
µA
µA
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
1
I
CC
2
I
SB
1
Vcc Operating
Supply Current
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
> V
IH
, f = 0
V
CC
= Max.,
CE
> V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V, or
V
IN
< 0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Ind.
-45 ns
Min. Max.
—
—
—
—
—
—
—
—
20
30
35
45
2
5
90
200
-70 ns
Min. Max.
—
—
—
—
—
—
—
—
20
30
30
40
2
5
90
200
-100 ns
Min. Max.
—
—
—
—
—
—
—
—
20
30
30
40
2
5
90
200
Unit
mA
mA
mA
I
SB
2
µA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
5
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc =3.3V.
Integrated Circuit Solution Inc.
SR006-0B
3
IS62LV256
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-45 ns
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to Low-Z Output
OE
to High-Z Output
CE
to Low-Z Output
CE
to High-Z Output
CE
to Power-Up
CE
to Power-Down
Min.
45
—
2
—
—
0
0
3
0
0
—
Max.
—
45
—
45
25
—
20
—
20
—
30
-70 ns
Min.
70
—
2
—
—
0
0
3
0
0
—
Max.
—
70
—
70
35
—
25
—
25
—
50
-100 ns
Min.
100
—
2
—
—
0
0
3
0
0
—
Max.
—
100
—
100
50
—
25
—
25
—
50
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
(2)
t
HZCE
(2)
t
PU
(3)
t
PD
(3)
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
5 ns
1.5V
See Figures 1a and 1b
AC TEST LOADS
1213
Ω
3.3V
1213
Ω
3.3V
OUTPUT
100 pF
Including
jig and
scope
1378
Ω
OUTPUT
5 pF
Including
jig and
scope
1378
Ω
Figure 1a.
Figure 1b.
4
Integrated Circuit Solution Inc.
SR006-0B
IS62LV256
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
t
RC
ADDRESS
t
AA
t
OHA
t
OHA
DATA VALID
D
OUT
READ CYCLE NO. 2
(1,3)
t
RC
ADDRESS
t
AA
t
OHA
OE
t
DOE
t
HZOE
CE
t
ACE
t
LZCE
t
LZOE
t
HZCE
DATA VALID
HIGH-Z
D
OUT
HIGH-Z
t
PU
t
PD
50%
50%
ICC
SUPPLY
CURRENT
ISB
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE, CE
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transitions.
Integrated Circuit Solution Inc.
SR006-0B
5
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