FP10R12NT3BOMA1,FP10R12NT3BOMA1 pdf中文资料,FP10R12NT3BOMA1引脚图,FP10R12NT3BOMA1电路-Datasheet-电子工程世界

FP10R12NT3BOMA1: 产品描述Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECONOPIM-23; 产品类别分立半导体晶体管; 文件大小337KB，共11页; 制造商EUPEC [eupec GmbH]

下载文档详细参数选型对比全文预览

FP10R12NT3BOMA1概述

Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECONOPIM-23

	FP10R12NT3BOMA1	FP10R12NT3
描述	Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECONOPIM-23	Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECONOPIM-23
厂商名称	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]
包装说明	ECONOPIM-23	ECONOPIM-23
Reach Compliance Code	unknown	unknown
外壳连接	ISOLATED	ISOLATED
最大集电极电流 (IC)	18 A	18 A
集电极-发射极最大电压	1200 V	1200 V
配置	COMPLEX	COMPLEX
JESD-30 代码	R-XUFM-X23	R-XUFM-X23
元件数量	7	7
端子数量	23	23
封装主体材料	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL
表面贴装	NO	NO
端子形式	UNSPECIFIED	UNSPECIFIED
端子位置	UPPER	UPPER
晶体管元件材料	SILICON	SILICON
标称断开时间 (toff)	540 ns	540 ns
标称接通时间 (ton)	70 ns	70 ns
Base Number Matches	1	1

器件捷径: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY