RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
参数名称 | 属性值 |
厂商名称 | TEMIC |
Reach Compliance Code | unknown |
最大集电极电流 (IC) | 0.02 A |
集电极-发射极最大电压 | 10 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 100 |
最高频带 | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | NPN |
最小功率增益 (Gp) | 14.8 dB |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 7800 MHz |
Base Number Matches | 1 |
BFR181TW | BFP280TW | BFP280TRW | BFP182TRW | BFP183TRW | BFP181TRW | S822TRW | |
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描述 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.008A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
最大集电极电流 (IC) | 0.02 A | 0.01 A | 0.01 A | 0.035 A | 0.065 A | 0.02 A | 0.008 A |
集电极-发射极最大电压 | 10 V | 8 V | 8 V | 10 V | 10 V | 10 V | 6 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 100 | 100 | 100 | 100 | 110 | 100 | 90 |
最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 4 | 4 | 4 | 4 | 4 | 4 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
最小功率增益 (Gp) | 14.8 dB | 16 dB | 16 dB | 18 dB | 17 dB | 17 dB | 14 dB |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 7800 MHz | 7000 MHz | 7000 MHz | 7500 MHz | 7400 MHz | 7800 MHz | 5200 MHz |
厂商名称 | TEMIC | TEMIC | TEMIC | - | - | TEMIC | TEMIC |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - |
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