BPW78
Vishay Telefunken
Silicon NPN Phototransistor
Description
BPW78 is a high sensitive silicon NPN epitaxial planar
phototransistor in a flat side view plastic package.
A small recessed lens provides a high sensitivity in a
low profile case.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(
l
p
> 850nm).
Features
D
D
D
D
D
D
D
D
D
Plastic case with IR filter
Suitable for near infrared radiation
High radiant sensitivity
Super flat sideview case with spherical lens
Lens integrated
Irradiation direction vertical to mounting direction
Angle of half sensitivity
ϕ
=
±
25
°
Selected into sensitivity groups
Compatibel with CQX48
94 8487
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
32
5
100
200
150
100
–55...+100
260
400
Unit
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
40
°
C
x
x
t
x
5s
Document Number 81528
Rev. 2, 20-May-99
www.vishay.com
1 (5)
BPW78
Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Collector Emitter Breakdown
Voltage
Emitter Collector Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Test Conditions
I
C
= 1 mA
I
E
= 100 A
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
Symbol
V
(BR)CE
O
Min
32
5
Typ
Max
Unit
V
V
m
V
(BR)EC
O
I
CEO
C
CEO
ϕ
E
e
= 1 mW/cm
2
,
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
l
p
l
0.5
t
on
t
off
f
c
1
6
±25
920
850...980
100
l
V
CEsat
6
5
110
0.3
nA
pF
deg
nm
nm
V
W
W
W
m
s
m
s
kHz
Type Dedicated Characteristics
T
amb
= 25
_
C
Parameter
Test Conditions
Collector Light Current V
CE
=5 V,
E
e
=1 mW/cm
2
,
p
=950 nm
Type
BPW78A
BPW78B
Symbol
I
ca
I
ca
Min
1
2
Typ
2
4
Max
3
Unit
mA
mA
l
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
200
P
tot
– Total Power Dissipation ( mW )
160
I
CEO
– Collector Dark Current ( nA )
10
4
10
3
V
CE
= 10V
10
2
120
R
thJA
80
40
0
0
20
40
60
80
100
10
1
10
0
20
94 8249
40
60
80
100
94 8259
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
www.vishay.com
2 (5)
Document Number 81528
Rev. 2, 20-May-99
BPW78
Vishay Telefunken
2.0
I
ca rel
– Relative Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
94 8239
C
CEO
– Collector Emitter Capacitance ( pF )
20
16
f=1MHz
V
CE
=5V
E
e
=1mW/cm
2
l
=950nm
12
8
4
0
0.1
1
10
100
V
CE
– Collector Emitter Voltage ( V )
20
40
60
80
100
94 8247
T
amb
– Ambient Temperature (
°C
)
Figure 3. Relative Collector Current vs.
Ambient Temperature
t
on
/ t
off
– Turn on / Turn off Time ( s )
10
I
ca
– Collector Light Current ( mA )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
10
8
6
4
2
0
t
on
V
CE
=5V
R
L
=100
=950nm
m
1
BPW 78 B
BPW 78 A
l
W
0.1
V
CE
=5V
l
=950nm
0.01
0.01
t
off
0.1
1
10
94 8253
0
4
8
12
16
94 8251
E
e
– Irradiance ( mW / cm
2
)
I
C
– Collector Current ( mA )
Figure 4. Relative Radiant Sensitivity vs.
Angular Displacement
10
I
ca
– Collector Light Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
S ( )
rel
– Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
700
l
=950nm
E
e
=1 mW/cm
2
0.5 mW/cm
2
1
0.2 mW/cm
2
0.1 mW/cm
2
0.1
0.1
1
10
100
l
800
94 8252
V
CE
– Collector Emitter Voltage ( V )
94 8270
l
– Wavelength ( nm )
900
1000
1100
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81528
Rev. 2, 20-May-99
www.vishay.com
3 (5)
BPW78
Vishay Telefunken
0°
10
°
20
°
30°
S
rel
– Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8254
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions in mm
96 12193
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4 (5)
Document Number 81528
Rev. 2, 20-May-99
BPW78
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81528
Rev. 2, 20-May-99
www.vishay.com
5 (5)
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