BPW46L
Vishay Telefunken
Silicon PIN Photodiode
Description
BPW46L is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package. Due to its
waterclear epoxy the device is sensitive to visible and
infrared radiation.
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
D
D
D
D
D
D
D
D
Long lead package (33,2 mm)
Large radiant sensitive area (A=7.5 mm
2
)
Wide angle of half sensitivity
ϕ
=
±
65
°
High photo sensitivity
Fast response times
Small junction capacitance
Clear plastic case
Suitable for visible and near infrared radiation
14439
Applications
High speed photo detector
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
T
amb
Symbol
V
R
P
V
T
j
T
stg
T
sd
R
thJA
Value
60
215
100
–55...+100
260
350
Unit
V
mW
°
C
°
C
°
C
K/W
x
25
°
C
t
x
5s
Document Number 81525
Rev. 2, 16-Nov-99
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Basic Characteristics
T
amb
= 25
_
C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Temp. Coefficient of I
k
Reverse Light Current
g
Test Conditions
I
R
= 100
m
A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
A
= 1 klx
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
A
= 1 klx, V
R
= 5 V
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 5 V
Symbol
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
I
k
TK
Ik
I
ra
I
ra
Min
60
Typ
2
70
25
350
–2.6
70
47
0.1
75
50
±65
900
600...1050
4x10
–14
100
100
Max
30
40
Unit
V
nA
pF
pF
mV
mV/K
m
A
m
A
%/K
m
A
m
A
deg
nm
nm
W/√ Hz
ns
ns
40
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
V
R
= 10 V,
l
= 950 nm
Rise Time
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
Fall Time
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
l
p
l
0.5
NEP
t
r
t
f
ϕ
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
I
ra rel
– Relative Reverse Light Current
1000
I
ro
– Reverse Dark Current ( nA )
1.4
1.2
100
l
=950nm
V
R
=5V
1.0
10
0.8
V
R
=10V
1
20
40
60
80
100
0.6
0
94 8416
20
40
60
80
100
94 8403
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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BPW46L
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1000
I
ra
– Reverse Light Current (
m
A )
C
D
– Diode Capacitance ( pF )
80
E=0
f=1MHz
60
100
10
40
1
V
R
=5V
l
=950nm
20
0.1
0.01
94 8417
0
0.1
1
10
94 8407
0.1
1
10
100
E
e
– Irradiance ( mW / cm
2
)
V
R
– Reverse Voltage ( V )
Figure 3. Reverse Light Current vs. Irradiance
1000
I
ra
– Reverse Light Current (
m
A )
Figure 6. Diode Capacitance vs. Reverse Voltage
S (
l
)
rel
– Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
350
100
10
V
R
=5V
1
0.1
10
1
94 8418
10
2
10
3
10
4
94 8420
550
750
950
1150
E
A
– Illuminance ( lx )
l
– Wavelength ( nm )
Figure 4. Reverse Light Current vs. Illuminance
100
I
ra
– Reverse Light Current (
m
A )
1 mW/cm
2
0.5 mW/cm
2
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0°
10
°
20
°
30°
S
rel
– Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.2 mW/cm
2
10
0.1 mW/cm
2
0.05 mW/cm
2
l
=950nm
1
0.1
94 8419
1
10
100
94 8406
0.6
0.4
0.2
0
0.2
0.4
0.6
V
R
– Reverse Voltage ( V )
Figure 5. Reverse Light Current vs. Reverse Voltage
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81525
Rev. 2, 16-Nov-99
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Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81525
Rev. 2, 16-Nov-99
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