BPV10
Vishay Telefunken
Silicon PIN Photodiode
Description
BPV10 is a very high speed and high sensitive PIN
photodiode in a standard T–1
¾
plastic package.
Due to its waterclear epoxy the device is sensitive to
visible and infrared radiation.
94 8390
Features
D
D
D
D
D
D
Extra fast response times
High bandwidth B = 250 MHz at V
R
=12 V
High photo sensitivity
Radiant sensitive area A=0.78mm
2
Standard T–1
¾
(ø 5 mm) package with clear lens
Angle of half sensitivity
ϕ
=
±
20
°
Applications
Wide band detector for demodulation of fast signals, industrial electronics, measurement, control circuits and
fast interrupters
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
T
amb
Symbol
V
R
P
V
T
j
T
stg
T
sd
R
thJA
Value
60
215
100
–55...+100
260
350
Unit
V
mW
°
C
°
C
°
C
K/W
x
25
°
C
t
x
5 s, 2 mm from body
Document Number 81502
Rev. 3, 20-May-99
www.vishay.com
1 (5)
BPV10
Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
g
Short Circuit Current
Reverse Light Current
g
Test Conditions
I
F
= 50 mA
I
R
= 100 A, E = 0
V
R
= 20 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
E
A
= 1 klx
E
e
= 1 mW/cm
2
, = 950 nm
E
A
= 1 klx
E
e
= 1 mW/cm
2
, = 950 nm
E
A
= 1 klx, V
R
= 5 V
E
e
= 1 mW/cm
2
,
= 950 nm, V
R
= 5 V
V
R
= 5 V, = 950 nm
Symbol
V
F
V
(BR)
I
ro
C
D
C
D
V
o
V
o
I
k
I
k
I
ra
I
ra
s( )
ϕ
Min
60
1
11
3.8
480
450
80
65
85
70
0.55
±20
920
570...1040
72
3x10
–14
3x10
12
2.5
2.5
5
Typ
1.0
Max
1.3
Unit
V
V
nA
pF
pF
mV
mV
A
A
A
A
m
l
l
l
38
m
m
m
m
Absolute Spectral Sensitivity
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
= 950 nm
Noise Equivalent Power
V
R
= 20 V, = 950 nm
Detectivity
V
R
= 20 V, = 950 nm
l
l
l
l
l
l
p
l
0.5
h
t
r
t
f
NEP
D
*
Rise Time
Fall Time
l
l
V
R
= 50 V, R
L
= 50
= 820 nm
V
R
= 50 V, R
L
= 50
= 820 nm
W
,
W
,
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/
W
ns
ns
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
I
ra rel
– Relative Reverse Light Current
1000
I
ro
– Reverse Dark Current ( nA )
1.4
1.2
100
l
=950nm
V
R
=5V
1.0
10
0.8
V
R
=20V
1
20
94 8436
0.6
40
60
80
100
94 8416
0
20
40
60
80
100
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
www.vishay.com
2 (5)
Document Number 81502
Rev. 3, 20-May-99
BPV10
Vishay Telefunken
S (
l
)
rel
– Relative Spectral Sensitivity
10
94 8440
1000
I
ra
– Reverse Light Current (
m
A )
1.0
0.8
0.6
0.4
0.2
0
350
100
10
1
V
R
=5V
l
=950nm
0.1
0.01
94 8437
0.1
1
550
750
950
1150
E
e
– Irradiance ( mW / cm
2
)
l
– Wavelength ( nm )
Figure 3. Reverse Light Current vs. Irradiance
100
I
ra
– Reverse Light Current (
m
A )
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
10
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
1
0.1
94 8438
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0°
10
°
20
°
30°
S
rel
– Relative Sensitivity
l
=950nm
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
1
10
100
94 8624
0.6
0.4
0.2
0
0.2
0.4
0.6
V
R
– Reverse Voltage ( V )
Figure 4. Reverse Light Current vs. Reverse Voltage
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
12
C
D
– Diode Capacitance ( pF )
10
8
6
4
2
0
0.1
94 8439
E=0
f=1MHz
1
10
100
V
R
– Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 81502
Rev. 3, 20-May-99
www.vishay.com
3 (5)
BPV10
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81502
Rev. 3, 20-May-99
www.vishay.com
5 (5)
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