Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN
| 参数名称 | 属性值 |
| 厂商名称 | TEMIC |
| 包装说明 | TO-39, 3 PIN |
| Reach Compliance Code | unknown |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 0.99 A |
| 最大漏源导通电阻 | 3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 10 pF |
| JEDEC-95代码 | TO-205AD |
| JESD-30 代码 | O-MBCY-W3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 参考标准 | MIL |
| 表面贴装 | NO |
| 端子面层 | NOT SPECIFIED |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| JANTX2N6660 | JANTX2N6661 | 2N7002L | VQ1004P | VN2406D | VN88AFD | VQ1004J | |
|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED PACKAGE-14 | Power Field-Effect Transistor, 3A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 3A I(D), 80V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, |
| 厂商名称 | TEMIC | TEMIC | TEMIC | TEMIC | TEMIC | TEMIC | TEMIC |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最小漏源击穿电压 | 60 V | 90 V | 60 V | 60 V | 240 V | 80 V | 60 V |
| 最大漏极电流 (ID) | 0.99 A | 0.86 A | 0.8 A | 0.46 A | 3 A | 3 A | 0.46 A |
| 最大漏源导通电阻 | 3 Ω | 4 Ω | 7.5 Ω | 3.5 Ω | 6 Ω | 4 Ω | 3.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | R-PDSO-G3 | R-CDIP-T14 | R-PSFM-T3 | R-PSFM-T3 | R-PDIP-T14 |
| 端子数量 | 3 | 3 | 3 | 14 | 3 | 3 | 14 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | METAL | METAL | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | SMALL OUTLINE | IN-LINE | FLANGE MOUNT | FLANGE MOUNT | IN-LINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | YES | NO | NO | NO | NO |
| 端子形式 | WIRE | WIRE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | BOTTOM | BOTTOM | DUAL | DUAL | SINGLE | SINGLE | DUAL |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 包装说明 | TO-39, 3 PIN | TO-39, 3 PIN | SMALL OUTLINE, R-PDSO-G3 | SIDE BRAZED PACKAGE-14 | - | - | - |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | - | SINGLE | SINGLE | - |
| 元件数量 | 1 | 1 | 1 | - | 1 | 1 | - |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - | - |
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