DATA SHEET
SILICON TRANSISTOR
KN4xxx
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
FEATURES
•
Compact package
•
Resistors built-in type
•
Complementary to KA4xxx
1.6 ± 0.1
0.8 ± 0.1
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
ORDERING INFORMATION
PART NUMBER
KN4xxx
PACKAGE
SC-75 (USM)
3
0 to 0.1
2
1
0.2
+0.1
–0
0.5
0.5
1.0
1.6 ± 0.1
0.6
0.75 ± 0.05
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Note2
V
CBO
V
CEO
V
EBO
I
C
I
C(pulse)
P
T
T
j
T
stg
−60
−50
Note1
V
V
V
A
A
2
EQUIVALENT CIRCUIT
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
−0.1
−0.2
0.2
150
–55 to +150
Total Power Dissipation
Note3
Junction Temperature
Storage Temperature
Note 1.
PART NUMBER
W
°C
°C
R
1
R
2
1
V
EBO
(V)
−10
−10
−10
−10
−5
−5
−5
−5
−5
MARK
R
1
(kΩ)
R
2
(kΩ)
10.0
22.0
47.0
4.7
10.0
PART NUMBER
V
EBO
(V)
−15
−5
−5
−5
−10
−5
−5
−15
−25
MARK
R
1
(kΩ)
R
2
(kΩ)
22.0
KN4A4M
KN4F4M
KN4L4M
KN4L3M
KN4L3N
KN4L3Z
KN4A3Q
KN4A4P
KN4F4N
A7
B7
C7
D7
E7
F7
G7
H7
X7
10.0
22.0
47.0
4.7
4.7
4.7
1.0
10.0
22.0
KN4L4L
KN4A4Z
KN4F4Z
KN4L4Z
KN4F3M
KN4F3P
K7
Y7
Z7
N7
P7
Q7
R7
S7
T7
47.0
10.0
22.0
47.0
2.2
2.2
2.2
10.0
47.0
2.2
10.0
47.0
4.7
10.0
10.0
47.0
47.0
KN4F3R
KN4A4L
KN4L4K
<R>
Note 2.
PW
≤
10 ms, Duty Cycle
≤
50%
2
Note 3.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16489EJ5V0DS00 (5th edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
KN4xxx
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Collector Cut-off Current
DC Current Gain
SYMBOL
I
CBO
h
FE1
h
FE2
Collector Saturation Voltage
Low-level Input Voltage
High-level Input Voltage
Input Resistor
Emitter to Base Resistor
V
CE(sat)
V
IL
V
IH
R
1
R
2
TEST CONDITIONS
V
CB
=
−50
V, I
E
= 0
V
CE
=
−5.0
V, I
C
=
−5.0
mA
V
CE
=
−5.0
V, I
C
=
−50
mA
I
C
=
−5.0
mA, I
B
=
−0.25
mA
V
CE
=
−5.0
V, I
C
=
−100
μ
A
V
CE
=
−0.2
V, I
C
=
−5.0
mA
Note3
Note2
−0.2
Note1
MIN.
TYP.
MAX.
−100
UNIT
nA
-
-
V
V
V
kΩ
kΩ
Note 1.
PART NUMBER
MIN.
KN4A4M
KN4F4M
KN4L4M
KN4L3M
KN4L3N
KN4L3Z
KN4A3Q
KN4A4P
KN4F4N
KN4L4L
KN4A4Z
KN4F4Z
KN4L4Z
KN4F3M
KN4F3P
KN4F3R
KN4A4L
KN4L4K
35
60
85
20
35
135
35
85
85
60
135
135
135
8
35
85
20
35
h
FE1
TYP.
MAX.
100
195
340
80
100
600
100
340
340
195
600
600
600
50
100
340
80
100
MIN.
80
90
95
80
80
100
80
95
95
90
100
100
100
50
80
95
80
80
h
FE2
TYP.
UNIT
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Note 2.
PART NUMBER
MIN.
KN4A4M
KN4F4M
KN4L4M
KN4L3M
KN4L3N
KN4L3Z
KN4A3Q
KN4A4P
KN4F4N
KN4L4L
KN4A4Z
KN4F4Z
KN4L4Z
KN4F3M
KN4F3P
KN4F3R
KN4A4L
KN4L4K
V
IL
TYP.
MAX.
−0.8
−0.8
−0.8
−0.8
−0.6
−0.5
−0.5
−0.5
−0.6
−0.9
−0.5
−0.5
−0.5
−0.8
−0.5
−0.5
−0.9
−2.0
MIN.
−3.0
−4.0
−5.0
−3.0
−3.0
−1.2
−2.0
−3.0
−3.0
−6.0
−2.0
−3.0
−4.0
−3.0
−2.0
−2.0
−6.0
−8.0
V
IH
TYP.
UNIT
MAX.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
2
Data Sheet D16489EJ5V0DS
KN4xxx
Note 3.
PART NUMBER
MIN.
KN4A4M
KN4F4M
KN4L4M
KN4L3M
KN4L3N
KN4L3Z
KN4A3Q
KN4A4P
KN4F4N
KN4L4L
KN4A4Z
KN4F4Z
KN4L4Z
KN4F3M
KN4F3P
KN4F3R
KN4A4L
KN4L4K
7.00
15.40
32.90
3.29
3.29
3.29
0.70
7.00
15.40
32.90
7.00
15.40
32.90
1.54
1.54
1.54
7.00
32.90
R
1
TYP.
10.00
22.00
47.00
4.70
4.70
4.70
1.00
10.00
22.00
47.00
10.00
22.00
47.00
2.20
2.20
2.20
10.00
47.00
MAX.
13.00
28.60
61.10
6.11
6.11
6.11
1.30
13.00
28.60
61.10
13.00
28.60
61.10
2.86
2.86
2.86
13.00
61.10
MIN.
7.00
15.40
32.90
3.29
7.00
7.00
32.90
32.90
15.40
R
2
TYP.
10.00
22.00
47.00
4.70
10.00
10.00
47.00
47.00
22.00
UNIT
MAX.
13.00
28.60
61.10
6.11
13.00
13.00
61.10
61.10
28.60
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
1.54
7.00
32.90
3.29
7.00
2.20
10.00
47.00
4.70
10.00
2.86
13.00
61.10
6.11
13.00
<R>
250
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mW
Mounted on ceramic substrate of
2
3.0 cm x 0.64 mm
200
150
100
50
0
0
50
100
150
200
T
A
- Ambient Temperature -
°C
Data Sheet D16489EJ5V0DS
3
KN4xxx
[KN4A4M]
TYPICAL CHARACTERISTICS (T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
−50
−40
−30
−20
−10
0
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
V
CE
- Collector to Emitter Voltage - V
- 0.5
I
C
- Collector Current - mA
I
B
=
−430
μ
A
−380
−330
−280
−230
−180
−130
−80
10.0 V
- 0.4
- 0.3
- 0.2
- 0.1
0
0
- 20
- 40
- 60
- 80
- 100
V
IN
= 5.0 V
15.0 V
0
−2
−4
−6
−8
−10
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
V
CE(sat)
- Collector Saturation Voltage - V
-1
V
CE
=
−5.0
V
h
FE
- DC Current Gain
100
I
C
= 10½I
B
10
T
A
= 75°C
25°C
−25°C
- 0.1
T
A
= 75°C
25°C
−25°C
- 0.01
-1
- 10
- 100
1
-1
- 10
- 100
I
C
- Collector Current - mA
I
C
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
- 100
COLLECTOR CURRENT vs. INPUT VOLTAGE
- 1000
V
CE
=
−0.2
V
I
C
- Collector Current -
μ
A
V
CE
=
−5.0
V
T
A
= 75°C
V
IN
- Input Voltage - V
- 10
- 100
-1
T
A
=
−25°C
25°C
75°C
-1
- 10
- 100
25°C
- 10
−25°C
- 0.1
-1
- 0.4
- 0.6
- 0.8
-1
- 1.2
- 1.4
- 1.6
- 1.8
I
C
- Collector Current - mA
V
IN
- Input Voltage - V
RESISTOR vs. AMBIENT TEMPERATURE
20
16
R - Resistor - kΩ
12
8
4
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
4
Data Sheet D16489EJ5V0DS
KN4xxx
[KN4F4M]
TYPICAL CHARACTERISTICS (T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
- Collector to Emitter Voltage - V
−50
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
- 0.5
- 0.4
- 0.3
- 0.2
- 0.1
0
0
- 20
- 40
I
C
- Collector Current - mA
I
B
=
−400
μ
A
−350
−300
−250
−200
−150
−100
−50
V
IN
= 5.0 V
10.0 V
−40
−30
−20
−10
0
15.0 V
0
−2
−4
−6
−8
−10
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
V
CE(sat)
- Collector Saturation Voltage - V
-1
V
CE
=
−5.0
V
h
FE
- DC Current Gain
100
I
C
= 10
½
I
B
10
T
A
= 75°C
25°C
−25°C
- 0.1
T
A
= 75°C
25°C
−25°C
- 0.01
-1
- 10
- 100
1
-1
- 10
- 100
I
C
- Collector Current - mA
I
C
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
- 100
COLLECTOR CURRENT vs. INPUT VOLTAGE
- 1000
I
C
- Collector Current -
μ
A
V
CE
=
−0.2
V
V
IN
- Input Voltage - V
- 10
V
CE
=
−5.0
V
T
A
= 75°C
- 100
25°C
- 10
-1
T
A
=
−25°C
25°C
75°C
- 100
−25°C
- 0.1
-1
- 10
-1
- 0.6
- 0.8
-1
- 1.2
- 1.4
- 1.6
I
C
- Collector Current - mA
V
IN
- Input Voltage - V
RESISTOR vs. AMBIENT TEMPERATURE
50
40
R - Resistor - kΩ
30
20
10
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
Data Sheet D16489EJ5V0DS
5
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