The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 18 January 2005.
INCH POUND
MIL-PRF-19500/437E
18 October 2004
SUPERSEDING
MIL-PRF-19500/437D
15 September 1997
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,
1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1,
1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1
JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance
are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance
for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).
1.2 Physical dimensions. See figures 1 (DO-7 and DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC).
* 1.3 Maximum ratings. Maximum ratings are shown in 3.8 herein and as follows:
a.
PT = 500 mW (DO-7 and D0-35) at TL = +50°C, L = .375 inch (9.53 mm); both ends of case or
diode body to heat sink at L = .375 inch (9.53 mm). (Derate IZ to 0.0 mA dc at +175°C).
PT = 500 mW (D0-213AA) at TEC = +125°C. (Derate to 0 at +175°C).
-65°C
≤
TJ
≤
+175°C; -65°C
≤
TSTG
≤
+175°C.
b.
c.
* 1.4 Primary electrical characteristics. Primary electrical characteristic see 3.8 herein and as follows:
a.
b.
c.
d.
3.3 V dc
≤
Vz
≤
33 V dc.
R
θJL
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7 and D0-35).
R
θJEC
= 100°C/W (maximum) junction to end-caps (D0-213AA).
For derating see figures 4 and 5.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/437E
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
*
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://www.dodssp.daps.mil.
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA
19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in
MIL-PRF-19500.
C-.......................... 2 percent voltage tolerance devices.
D-.......................... 1 percent voltage tolerance devices.
JANH .................... High reliability product assurance level for unencapsulated devices.
JANK .................... Space reliability product assurance level for unencapsulated devices.
UR ........................ Unleaded or surface mounted diodes with round end-caps.
2
MIL-PRF-19500/437E
Dimensions
Ltr
Inches
Min
BD
BL
LD
LL
LU
.055
.120
.018
1.000
Max
.107
.300
.022
1.500
.050
Millimeters
Min
1.40
3.05
0.46
25.40
Max
2.72
7.62
0.56
38.10
1.27
4
3
3
Notes
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any,
shall be included within this cylinder but shall not be subject to minimum
limit of BD.
4. Within this zone lead, diameter may vary to allow for lead finishes and
irregularities other than heat slugs.
5. For DO-7 packages (see 3.4.1).
6. Dimensioning and tolerancing shall be in accordance with ASME Y14.5M.
FIGURE 1. Physical dimensions types 1N5518B-1, C-1, and D-1
through 1N5546B-1, C-1, D-1 (DO-7 and DO-35).
3
MIL-PRF-19500/437E
Dimensions
Ltr
Inches
Min
BD
BL
ECT
S
.063
.130
.016
Max
.067
.146
.022
Millimeter
Min
1.60
3.30
0.41
Max
1.70
3.71
0.56
.001 min
0.03 min
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensioning and tolerancing shall be in accordance with ASME Y14.5M.
FIGURE 2. Physical dimensions 1N5518BUR-1, CUR-1, and DUR-1
through 1N5546BUR-1, CUR-1, DUR-1 (DO-213AA).
4
MIL-PRF-19500/437E
JANHCA and JANKCA die
dimensions
Ltr
Inche
Min
A
B
.021
.013
Max
.025
.017
Millimeters
Min
0.53
0.33
Max
0.64
0.43
A
B
Ltr
JANHCB and JANKCB die
dimensions
Inches
Min
.024
.017
Max
.028
.021
Millimeters
Min
0.61
0.43
Max
0.71
0.53
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The JANHCA and JANKCA die thickness is .010 inch (0.25 mm) ±.002 inches (0.05 mm). Anode
metallization: Al, thickness = 25,000 Å minimum; cathode metallization: Thickness = 4,000 Å
minimum.
4. The JANHCB and JANKCB die thickness is .010 inch (0.25 mm) ±.002 inch (0.05 mm). Anode
metallization: Al, thickness = 40,000 Å minimum; cathode metallization: Au, thickness = 5,000 Å
minimum.
5. Circuit layout data: For zener operation, cathode must be operated positive with respect to anode.
6. Requirements in accordance with appendix G, MIL-PRF-19500, are performed in a TO-5 package
(see 6.5).
7. Dimensioning and tolerancing shall be in accordance with ASME Y14.5M.
FIGURE 3. Physical dimensions JANHC and JANKC die.
5
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
