REVISIONS
LTR
A
DESCRIPTION
Redraw. Update drawing to current requirements. - drw
DATE (YR-MO-DA)
09-04-14
APPROVED
Joseph D. Rodenbeck
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
Rick C. Officer
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STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
CHECKED BY
Charles E. Besore
APPROVED BY
Michael A. Frye
DRAWING APPROVAL DATE
91-02-11
REVISION LEVEL
A
SIZE
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
MICROCIRCUIT, LINEAR, FAST QUAD PNP
TRANSISTOR ARRAY, MONOLITHIC SILICON
CAGE CODE
67268
SHEET
1 OF 8
5962-89775
DSCC FORM 2233
APR 97
5962-E229-09
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example:
5962-89775
01
C
A
Drawing number
Device type
(see 1.2.1)
Case outline
(see 1.2.2)
Lead finish
(see 1.2.3)
1.2.1 Device types. The device types identify the circuit function as follows:
Device type
01
02
Generic number
EP2015
EP2015A
Circuit function
Fast quad PNP transistor array
Fast quad PNP transistor array
1.2.2 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows:
Outline letter
C
2
Descriptive designator
GDIP1-T14 or CDIP2-T14
CQCC1-N20
Terminals
14
20
Package style
Dual-in-line
Square leadless chip carrier
1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
Collector-base voltage (V
CB
) ............................................................................
Emitter-base voltage (V
EB
) ...............................................................................
Collector-emitter voltage (V
CE
).........................................................................
Collector current (I
C
) ........................................................................................
Base current (I
B
) ..............................................................................................
Power dissipation (P
D
) (T
A
= +25°C):
Each transistor .............................................................................................
Total package...............................................................................................
Junction temperature (T
J
) ................................................................................
Storage temperature range..............................................................................
Lead temperature (soldering, 10 seconds) ......................................................
Thermal resistance, junction-to-case (θ
JC
).......................................................
Thermal resistance, junction-to-ambient (θ
JA
):
Case C .........................................................................................................
Case 2..........................................................................................................
1.4 Recommended operating conditions.
Ambient operating temperature range (T
A
) ...................................................... -55°C to +125°C
40 V
5V
40 V
50 mA
10 mA
500 mW
1.25 W
175°C
-65°C to +150°C
+300°C
See MIL-STD-1835
86°C/W
100°C/W
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-89775
SHEET
A
2
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-
JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer
Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-
PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying
activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan
may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device.
These modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in accordance with MIL-
PRF-38535 is required to identify when the QML flow option is used.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535, appendix A and herein.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed
in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN
number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device.
3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance
to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a "Q" or "QML" certification mark in
accordance with MIL-PRF-38535 to identify when the QML flow option is used.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-89775
SHEET
A
3
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
-55C
T
A
+125C
unless otherwise specified
Change in base-emitter
voltage 1/
delta
V
BE
V
CE
= 4 V, I
C
= 1 mA
1
2, 3
1
2, 3
Static forward current ratio
between each of six possible
pairs of transistors 1/ 2/
delta
h
FE1
V
CE
= 1 V, I
C
= 0.1 mA
1
2, 3
1
2, 3
delta
h
FE2
V
CE
= 1 V, I
C
= 1 mA
1
2, 3
1
2, 3
delta
h
FE3
V
CE
= 1 V, I
C
= 10 mA
1
2, 3
1
2, 3
Static forward current transfer
ratio 3/
h
FE1
V
CE
= 1 V, I
C
= 0.1 mA
1
2, 3
1
2, 3
See footnotes at end of table.
02
01
75
30
150
60
02
01
02
01
02
01
02
01
Group A Device
subgroups type
Min
Limits
Max
5.0
10.0
1.0
2.0
10.0
20.0
5.0
10.0
10.0
20.0
5.0
10.0
10.0
20.0
5.0
10.0
%
mV
Unit
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-89775
SHEET
A
4
TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions
-55C
T
A
+125C
unless otherwise specified
Static forward current transfer
ratio 3/
h
FE2
V
CE
= 1 V, I
C
= 1 mA
1
2, 3
1
2, 3
h
FE3
V
CE
= 1 V, I
C
= 10 mA
1
2, 3
1
2, 3
Base to emitter saturation
voltage 3/
V
BE
I
C
= 10 mA, I
B
= 1 mA
1
2, 3
Collector to emitter saturation
voltage 3/
V
CE
I
C
= 10 mA, I
B
= 1 mA
1
2, 3
Breakdown voltage collector
to emitter 3/
Breakdown voltage collector
to base 3/
Breakdown voltage emitter to
base 3/
Collector cutoff current 3/
Emitter cutoff current 3/
1/
2/
3/
BV
CE
BV
CB
BV
EB
I
CB
I
EB
I
C
= 1 mA, I
B
= 0 mA
I
C
= 10 µA, I
E
= 0 mA
I
E
= 10 µA, I
C
= 0 mA
V
CB
= 30 V, I
E
= 0 mA
V
EB
= 4 V, I
C
= 0 mA
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
All
All
All
All
All
40
40
5
50
50
All
All
02
01
02
01
Group A Device
subgroups type
Min
75
30
150
60
75
30
100
40
0.9
1.1
0.2
0.3
V
V
V
nA
nA
V
V
Limits
Max
Unit
Delta V
BE
and delta h
FE
are measured between each of six possible pairs of transistors.
Delta h
FE
is calculated based on the difference divided by the larger of the two readings.
Applies to all four transistors.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-89775
SHEET
A
5
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