SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX23
•
•
•
•
High Current, Fast Switching.
Hermetic Metal TO3 Package.
Ideally suited for Motor Control
and Power Switching Circuits
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
PD
TJ
Tstg
Collector – Base Voltage
VBE = -1.5V
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
tp = 10ms
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
400V
400V
325V
7V
30A
40A
6A
250W
1.67W/°C
-65 to +175°C
-65 to +175°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
0.6
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 6344
Issue 3
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX23
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
V(BR)CEO
V(BR)EBO
ICEO
ICEX
IEBO
VCE(sat)
VBE(sat)
hFE
(1)
(1)
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Test Conditions
IC = 0.2mA
IE = 50mA
VCE = 260V
VCE = 400V
IB = 0
VBE = -1.5V
TC = 125°C
VEB = 5V
IC = 8A
IC = 16A
IC = 16A
IC = 8A
IC = 16A
IC = 0
IB = 1.6A
IB = 3.2A
IB = 3.2A
VCE = 4V
VCE = 4V
Min.
325
Typ
Max.
Units
V
7
3
3
12
1.0
0.2
0.35
1.15
12
8
0.8
1.0
1.5
60
V
mA
(1)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 2A
f = 10MHz
IC = 16A
IB1 = 3.2A
VCE = 15V
8
MHz
ton
ts
tf
Turn-On Time
Storage Time
Fall Time
0.55
1.7
0.26
1.3
2.5
1.2
µs
IC = 16A
IB1 = -IB2 = 3.2A
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 6344
Issue 3
Page 2 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX23
MECHANICAL DATA
Dimensions in mm (inches)
!
9 .9 5 (1 .5 7 3 )
m a x .
3 0 .4 0 (1 .1 9 7 )
3 0 .1 5 (1 .1 8 7 )
1 7 .1 5 (0 .6 7 5 )
1 6 .6 4 (0 .6 5 5 )
2 0 .3 2 (0 .8 0 0 )
1 8 .8 0 (0 .7 4 0 )
d ia .
1 1 .1 8 (0 .4 4 0 )
1 0 .6 7 (0 .4 2 0 )
1 .7 8 (0 .0 7 0 )
1 .5 2 (0 .0 6 0 )
1 .5 7 (0 .0 6 2 )
1 .4 7 (0 .0 5 8 )
d ia .
2 p lc s .
TO3 (TO-204AE)
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
1 2 .0 7 (0 .4 7 5 )
1 1 .3 0 (0 .4 4 5 )
7 .8 7 (0 .3 1 0 )
6 .9 9 (0 .2 7 5 )
2 6 .6 7 (1 .0 5 0 )
m a x .
4 .0 9 (0 .1 6 1 )
3 .8 4 (0 .1 5 1 )
d ia .
2 p lc s .
Website:
http://www.semelab-tt.com
Document Number 6344
Issue 3
Page 3 of 3
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