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JANTXV1N6124A

产品描述Trans Voltage Suppressor Diode, 500W, 42.6V V(RWM), Bidirectional, 1 Element, Silicon,
产品类别分立半导体    二极管   
文件大小163KB,共20页
制造商Bkc Semiconductors Inc
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JANTXV1N6124A概述

Trans Voltage Suppressor Diode, 500W, 42.6V V(RWM), Bidirectional, 1 Element, Silicon,

JANTXV1N6124A规格参数

参数名称属性值
是否Rohs认证不符合
Reach Compliance Codeunknown
最小击穿电压50.4 V
击穿电压标称值56 V
外壳连接ISOLATED
最大钳位电压80.7 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-LALF-W2
JESD-609代码e0
最大非重复峰值反向功率耗散500 W
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性BIDIRECTIONAL
认证状态Not Qualified
最大重复峰值反向电压42.6 V
最大反向电流1 µA
表面贴装NO
技术AVALANCHE
端子面层Tin/Lead (Sn/Pb)
端子形式WIRE
端子位置AXIAL
Base Number Matches1

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The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 23 October 1999.
INCH-POUND
MIL-PRF-19500/516D
23 July 1999
SUPERSEDING
MIL-S-19500/516C
20 January 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE
SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A,
1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A,
1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS,
1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS,
JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
This specification is approved for use within US Army Laboratory
Command, Department of the Army, and is available for use by all
Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient
voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.
1.2 Physical dimensions. See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein.
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:
PR =
2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at TA = +25°C (see figure 5
for derating).
3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at TL = +75°C for L = 0.375
inch (9.53 mm) (see figure 6).
PR =
PPR = 500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including
A and US suffix versions)) at tp = 1 ms (see figure 7).
-55°C
Top
+175°C, -55°C
TSTG
+175°C (ambient temperatures).
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2 and 4 of table II herein.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,
Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing
at the end of this document or by letter.
AMSC N/A
Distribution Statement A. Approved for public release; distribution is unlimited.
FSC 5961
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