VISHAY
BYT54.
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
\
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Applications
Very fast rectification and switching diodes
Mechanical Data
Case:
Sintered glass case, SOD 57
949539
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
370 mg, (max. 500 mg)
Parts Table
Part
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
Type differentiation
V
R
= 50 V; I
FAV
= 1.25 A
V
R
= 100 V; I
FAV
= 1.25 A
V
R
= 200 V; I
FAV
= 1.25 A
V
R
= 400 V; I
FAV
= 1.25 A
V
R
= 600 V; I
FAV
= 1.25 A
V
R
= 800 V; I
FAV
= 1.25 A
V
R
= 1000 V; I
FAV
= 1.25 A
SOD57
SOD57
SOD57
SOD57
SOD57
SOD57
SOD57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Sub type
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
Value
50
100
200
400
600
800
1000
Unit
V
V
V
V
V
V
V
Document Number 86031
Rev. 5, 07-Jan-03
www.vishay.com
1
BYT54.
Vishay Semiconductors
Parameter
Peak forward surge current
Average forward current
Junction and storage temperature range
on PC board
l = 10 mm
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
Non repetitive reverse avalanche energy
I
(BR)R
= 0.4 A
I
(BR)R
= 0.4 A
I
(BR)R
= 0.4 A
BYT54J
BYT54K
BYT54M
Test condition
t
p
= 10 ms, half sinewave
Sub type
Symbol
I
FSM
I
FAV
I
FAV
VISHAY
Value
30
0.75
1.25
Unit
A
A
A
°C
°C
°C
°C
°C
°C
°C
mJ
mJ
mJ
T
j
= T
stg
- 55 to +
175
T
j
= T
stg
- 55 to +
175
T
j
= T
stg
- 55 to +
175
T
j
= T
stg
- 55 to +
175
T
j
= T
stg
- 55 to +
175
T
j
= T
stg
- 55 to +
175
T
j
= T
stg
- 55 to +
165
E
R
E
R
E
R
10
10
10
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25 mm
Sub type
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse recovery time
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
Test condition
Sub type
Symbol
V
F
I
R
I
R
t
rr
Min
Typ.
Max
1.5
5
150
100
Unit
V
µA
µA
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
Figure 1. Max. Thermal Resistance vs. Lead Length
120
100
80
60
l
40
20
0
0
5
10
15
T
L
=constant
20
25
30
l – Lead Length ( mm )
l
94 9552
www.vishay.com
2
Document Number 86031
Rev. 5, 07-Jan-03
VISHAY
BYT54.
Vishay Semiconductors
10.000
P
R
– Reverse Power Dissipation ( mW )
450
400
350
300
250
200
150
100
50
0
0.0
0.5
1.0 1.5 2.0 2.5 3.0
V
F
– Forward Voltage ( V )
3.5
16341
V
R
= V
RRM
I
F
– Forward Current ( A)
T
j
=175°C
T
j
=25°C
1.000
P
R
–Limit
@100%V
R
0.100
0.010
P
R
–Limit
@80%V
R
0.001
16338
25
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
Figure 2. Forward Current vs. Forward Voltage
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1.4
I
FAV
– Average Forward Current ( A )
C
D
– Diode Capacitance ( pF )
35
V
R
=V
RRM
half sinewave
R
thJA
=45K/W
l=10mm
30
25
20
15
10
5
0
0
20
40
60
80 100 120 140 160 180
16342
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R
thJA
=100K/W
PCB: d=25mm
f=1MHz
0.1
1.0
10.0
100.0
16339
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
1000
V
R
= V
RRM
I
R
– Reverse Current (
m
A )
100
10
1
25
16340
50
75
100
125
150
175
T
j
– Junction Temperature (
°C
)
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86031
Rev. 5, 07-Jan-03
www.vishay.com
3
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
BYT54.
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86031
Rev. 5, 07-Jan-03
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
