BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
Rev. 02 — 06 November 2000
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7509-75A in SOT78 (TO-220AB)
BUK7609-75A in SOT404
(D
2
-PAK).
2. Features
s
s
s
s
TrenchMOS™ technology
Q101 compliant
175
°C
rated
Standard level compatible.
3. Applications
c
c
s
Automotive and general purpose power switching:
x
12 V, 24 V and 42 V loads
x
Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
gate (g)
mb
Simplified outline
Symbol
drain (d)
source (s)
mounting base;
connected to drain (d)
mb
d
g
s
2
MBK106
MBB076
1
3
MBK116
1 2 3
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
Philips Semiconductors
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
T
mb
= 25
°C;
V
GS
= 10 V
T
mb
= 25
°C
V
GS
= 10 V; I
D
= 25 A
T
j
= 175
°C
Typ
−
−
−
−
7.7
−
Max
75
75
230
175
9
18.9
Unit
V
A
W
°C
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Symbol Parameter
m
Ω
m
Ω
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
°C;
V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V;
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
W
DSS
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 75 A;
V
DS
≤
75 V; V
GS
= 10 V; R
GS
= 50
Ω;
starting T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
R
GS
= 20 kΩ
Conditions
Min
−
−
−
−
−
−
−
−55
−55
−
−
−
Max
75
75
±20
75
65
440
230
+175
+175
75
440
560
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
9397 750 07655
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 02 — 06 November 2000
2 of 15
Philips Semiconductors
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
120
Pder (%)
100
03na19
03aa24
120
Ider
(%)
100
80
80
60
60
40
40
20
20
0
0
25
50
75
100
125
150 175 200
Tmb (oC)
0
0
25
50
75
100
125
150
Tmb
175 200
o
( C)
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
≥
4.5 V
I
D
I
der
=
------------------
×
100%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
1000
ID
(A)
RDSon = VDS/ ID
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03nb54
tp = 10 us
100
100 us
1 ms
10
P
tp
δ
=
T
D.C.
10 ms
100 ms
tp
T
t
1
1
10
VDS (V)
100
T
mb
= 25
°C;
I
DM
single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07655
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 02 — 06 November 2000
3 of 15
Philips Semiconductors
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
R
th(j-mb)
thermal resistance from junction to mounting
base
Figure 4
Value
60
50
Unit
K/W
K/W
0.65
K/W
7.1 Transient thermal impedance
1
Zth(j-mb)
(K/W)
δ
= 0.5
0.2
03nb55
0.1
0.1
0.05
0.02
0.01
P
δ
=
tp
T
Single Shot
tp
T
t
0.001
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07655
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 02 — 06 November 2000
4 of 15
Philips Semiconductors
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
V
(BR)DSS
Parameter
drain-source breakdown
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 75 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 175
°C
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
d
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
from drain lead 6mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
L
s
internal source inductance
from source lead to source
bond pad
V
DD
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V; R
G
= 10
Ω
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
−
−
−
−
−
−
−
−
−
5068
1082
620
35
107
183
100
4.5
3.5
6760
1300
850
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
nH
nH
−
−
7.7
−
9
18.9
mΩ
mΩ
−
−
−
0.05
−
2
10
500
100
µA
µA
nA
2
1
−
3
−
−
4
−
4.4
V
V
V
75
70
−
−
−
−
V
V
Min
Typ
Max
Unit
Static characteristics
−
2.5
−
nH
−
7.5
−
nH
9397 750 07655
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 02 — 06 November 2000
5 of 15
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