BTA201 series B, E and ER
Triacs logic level
Rev. 01 — 25 August 2005
Product data sheet
1. Product profile
1.1 General description
Passivated guaranteed commutation triacs in a plastic package. The ‘sensitive gate’ E and
ER series are intended for interfacing with low power drivers, including microcontrollers.
The high commutation B series are designed to commutate the full RMS current at the
maximum junction temperature without the aid of a snubber.
1.2 Features
s
Suitable for interfacing with low power
drivers, including microcontrollers
s
Reverse pinning option (ER type)
1.3 Applications
s
Motor control
s
Solenoid drivers
1.4 Quick reference data
s
s
s
s
s
s
I
TSM
≤
12.5 A
V
DRM
≤
600 V (BTA201-600B)
V
DRM
≤
600 V (BTA201-600E)
V
DRM
≤
800 V (BTA201-800B)
V
DRM
≤
800 V (BTA201-800E)
V
DRM
≤
800 V (BTA201-800ER)
s
s
s
s
s
s
I
T(RMS)
≤
1 A
I
GT
≤
50 mA (BTA201-600B)
I
GT
≤
10 mA (BTA201-600E)
I
GT
≤
50 mA (BTA201-800B)
I
GT
≤
10 mA (BTA201-800E)
I
GT
≤
10 mA (BTA201-800ER)
2. Pinning information
Table 1:
Pin
1
2
3
1
2
3
Pinning
Description
main terminal 2 (T2)
gate (G)
main terminal 1 (T1)
main terminal 1 (T1)
gate (G)
main terminal 2 (T2)
321
Simplified outline
B and E series
Symbol
T2
sym051
T1
G
ER series
SOT54 (TO92)
Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
3. Ordering information
Table 2:
Ordering information
Package
Name
BTA201-600B
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
TO-92
Description
plastic single-ended leaded (through hole) package; 3-leads
Version
SOT54
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
BTA201-600B
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
lead
≤
54.3
°C;
Figure 4
and
Figure 5
full sine wave;
T
j
= 25
°C
prior to surge;
Figure 2
and
Figure 3
t = 20 ms
t = 16.7 ms
I
2
t
dl
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
[1]
Conditions
Min
-
-
-
-
-
-
Max
600
600
800
800
800
1
Unit
V
V
V
V
V
A
-
-
-
-
-
-
12.5
13.7
0.78
50
2
5
0.1
+150
125
A
A
A
2
s
A/µs
A
W
W
°C
°C
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
9397 750 15154
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2005
2 of 12
Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
1.5
P
tot
(W)
α
α
003aaa954
35
T
lead
(max)
(°C)
α
= 180°
120°
1
90°
60°
30°
65
0.5
95
0
0
0.2
0.4
0.6
0.8
1
I
T(RMS)
(A)
125
1.2
α
= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
003aaa956
16
I
TSM
(A)
12
8
4
0
1
10
10
2
n
10
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
9397 750 15154
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2005
3 of 12
Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
10
3
I
TSM
(A)
I
T
003aaa955
I
TSM
t
T
T
j(init)
= 25
°C
max
10
2
(1)
10
10
−5
10
−4
10
−3
10
−2
t
p
(s)
10
−1
t
p
≤
20 ms
(1) dI
T
/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
003aaa957
3
I
T(RMS)
(A)
003aaa958
1.2
I
T(RMS)
(A)
1
54.3
°C
2
0.8
0.6
1
0.4
0.2
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
150
100
T
lead
(°C)
f = 50 Hz; T
lead
≤
66
°C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of lead
temperature; maximum values
9397 750 15154
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2005
4 of 12
Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
5. Thermal characteristics
Table 4:
Symbol
R
th(j-lead)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
150
Max
60
80
-
Unit
K/W
K/W
K/W
thermal resistance from junction to full cycle;
Figure 6
lead
half cycle
Figure 6
thermal resistance from junction to printed-circuit board
ambient
mounted; lead
length = 4 mm
10
2
Z
th(j-lead)
(K/W)
10
(1)
003aaa961
1
(2)
P
D
10
−1
t
p
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional
(2) Bidirectional
Fig 6. Transient thermal impedance as a function of pulse width
9397 750 15154
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2005
5 of 12
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