电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JANS1N6638US

产品描述Rectifier Diode, 1 Element, 0.3A, 125V V(RRM), Silicon, SURFACEMOUNT PACKAGE-2
产品类别分立半导体    二极管   
文件大小70KB,共2页
制造商Compensated Devices Inc
下载文档 详细参数 全文预览

JANS1N6638US在线购买

供应商 器件名称 价格 最低购买 库存  
JANS1N6638US - - 点击查看 点击购买

JANS1N6638US概述

Rectifier Diode, 1 Element, 0.3A, 125V V(RRM), Silicon, SURFACEMOUNT PACKAGE-2

JANS1N6638US规格参数

参数名称属性值
包装说明O-XELF-R2
Reach Compliance Codeunknown
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-XELF-R2
元件数量1
端子数量2
最大输出电流0.3 A
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
参考标准MIL-19500/578E
最大重复峰值反向电压125 V
最大反向恢复时间0.0045 µs
表面贴装YES
端子形式WRAP AROUND
端子位置END
Base Number Matches1

文档预览

下载PDF文档
• 1N6638US,1N6642US, 1N6643US AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/578
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/578
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
1N6638U & US
1N6642U & US
1N6643U & US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: I
FSM
= 2.5A, half sine wave, Pw = 8.3ms
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
V BR
TYPES
@ IR
=100 µA
V RWM
V F1
IFM
=10 mA
(Pulsed)
V (pk)
1N6638U & US
1N6642U & US
1N6643U & US
150
100
75
V (pk)
125
75
50
V dc
0.8
1.0
1.0
V dc
1.1
1.2
1.2
(Pulsed)
mA
200
100
100
V F2
@ I F2
tfr
IF
=50 mA
ns
20
20
20
trr
IR = 10 mA
IF = 10 mA
IREC = 1 mA
ns
4.5
5.0
6.0
DIM
D
F
G
S
MILLIMETERS
MIN
MAX
1.78
2.16
0.48
0.71
4.19
4.95
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
FIGURE 1
DESIGN DATA
CASE:
D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH:
Tin / Lead
I R1
TYPES
VR
= 20 V
nA dc
I R2
@V R
= V RWM
µA dc
I R3
V R = 20 V
TA = 150°C
µA dc
I R4
V R = V RWM
TA = 150°C
µA dc
C T1
VR=
0V
pF
C T2
VR=
1.5V
pF
THERMAL RESISTANCE: (R
OJEC):
50 °C/W maximum at L = 0
THERMAL IMPEDANCE: (Z
OJX): 25
°C/W maximum
POLARITY:
Cathode end is banded.
1N6638U & US
1N6642U & US
1N6643U & US
35
25
50
0.5
0.5
0.5
50
50
75
100
100
160
2.5
5.0
5.0
2.0
2.8
2.8
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 271  1653  999  1394  210  38  39  22  42  6 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved