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JANTX1N827UR-1

产品描述Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, SIMILAR TO DO-213AA, 2 PIN
产品类别分立半导体    二极管   
文件大小42KB,共2页
制造商Compensated Devices Inc
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JANTX1N827UR-1概述

Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, SIMILAR TO DO-213AA, 2 PIN

JANTX1N827UR-1规格参数

参数名称属性值
包装说明O-LELF-R2
Reach Compliance Codeunknown
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-213AA
JESD-30 代码O-LELF-R2
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
最大功率耗散0.5 W
认证状态Not Qualified
参考标准MIL-19500/159M
标称参考电压6.2 V
表面贴装YES
技术ZENER
端子形式WRAP AROUND
端子位置END
电压温度Coeff-Max0.062 mV/°C
最大电压容差5%
Base Number Matches1

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• 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 AND 1N829UR-1 AVAILABLE
IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/159
• TEMPERATURE COMPENSATED ZENER DIODES
• LEADLESS PACKAGE FOR SURFACE MOUNT
• 6.2 AND 6.55 VOLT NOMINAL ZENER VOLTAGES
• METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N821UR-1 thru 1N829UR-1
and
CDLL821 thru CDLL829A
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
l
R
= 2
µ
A @ 25°C & V
R
= 3 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
DIM
D
F
G
G1
S
CDI
TYPE
NUMBER
ZENER
VOLTAGE
V @I
Z
ZT
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
ZENER
IMPEDANCE
(Note 1)
Z
ZT
VOLTAGE
TEMPERATURE
STABILITY
∆V
ZT
-55° to +100°
(Note 2)
EFFECTIVE
TEMPERATURE
COEFFICIENT
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
VOLTS
CDLL821
CDLL821A
CDLL822
CDLL823
CDLL823A
CDLL824
CDLL825
CDLL825A
CDLL826
CDLL827
CDLL827A
CDLL828
CDLL829
CDLL829A
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
6.2 - 6.9
5.9 - 6.5
5.9 - 6.5
6.2 - 6.9
5.9 - 6.5
5.9 - 6.5
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
15
10
15
15
10
15
15
10
15
15
10
15
15
10
mV
96
96
96
48
48
48
19
19
20
9
9
10
5
5
% / °C
0.01
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
FIGURE 1
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
† Double Anode: Electrical Specifications Apply Under Both Bias Polarities.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current
equal to 10% of lZT.
The maximum allowable change observed over the entire temperature range i.e.,
the diode voltage will not exceed the specified mV at any discrete temperature
between the established limits, per JEDEC standard No.5.
NOTE 2
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

 
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