The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 18 August 2007.
INCH-POUND
MIL-PRF-19500/435H
18 May 2007
SUPERSEDING
MIL-PRF-19500/435G
10 November 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES
1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,
1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are
provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for
each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.
* 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC).
* 1.3 Maximum ratings Unless otherwise specified T
C
= 25°C. Maximum ratings are as shown in maximum test
ratings herein (see 3.8), and as follows:
a.
P
TL
= 500 mW (DO-35) at T
L
= 50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). (Derate I
Z
to 0.0 mA dc at +175°C).
P
TEC
= 500 mW (DO-213AA) at T
EC
= 125°C. (Derate to 0 at 175°C). -65°C
≤
T
J
≤
+175°C; -65°C
≤
T
STG
≤
+175°C.
PTPCB = 400 mW, TA = +55°C. (Derate to 0 at +55°C).
b.
c.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
http://assist.daps.dla.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/435H
* 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in primary test ratings herein
(see 3.8) and as follows:
a.
b.
c.
d.
e.
1.8 V dc
≤
V
z
≤
100 V dc.
R
θJL
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-35) mounting conditions (see figure 4).
Noise density see 4.5.5 and figure 5.
R
θJEC
= 100°C/W (maximum) junction to end-caps (DO-213AA).
See figures 6, 7, and 8 for derating curves. T
A
= +75°C for both axial and MELF (US) on printed circuit board
(PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (US) = .05 inch (1.27 mm) x
.087 inch (2.21 mm); pads (Axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (0.762 mm) x 1 inch (25.4
mm) long, axial lead length L
≤
.125 inch (≤ 3.18 mm); R
θJA
with a defined thermal resistance condition
included is measured at IO = 1 A.
R
θJA
= 300°C/W. Junction to ambient including PCB see note 1.4.e.
For derating see figure 7.
For thermal impedance curves, see figures 9, 10, and 11.
f.
g.
h.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/435H
Ltr
Inches
Min
BD
BL
LD
LL
LL
1
.055
.120
.018
1.000
Dimensions
Millimeters
Min
1.40
3.05
0.46
25.40
Max
2.72
7.62
0.56
38.10
1.27
Notes
Max
.107
.300
.022
1.500
.050
3
3
4
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be
included within this cylinder but shall not be subject to minimum limit of BD. The BL
dimension shall include the entire body including slugs.
4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities
other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 1. Semiconductor device, diode, types 1N4099-1 through 1N4135-1
and 1N4614-1 through 1N4627-1 (DO-35).
3
MIL-PRF-19500/435H
Symbol
Inches
Min
Dimensions
Millimeters
Min
Max
Max
BD
ECT
BL
S
.063
.016
.130
.067
.022
.146
1.60
0.41
3.30
1.70
0.56
3.71
.001 min
0.03 min
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2. Physical dimensions 1N4099UR-1 through 1N4135UR-1 and
1N4614UR-1 through 1N4627UR-1 (DO-213AA).
4
MIL-PRF-19500/435H
JANHCA and JANKCA die
dimensions
Ltr
Inches
Min
A
B
.021
.013
Max
.025
.017
Millimeters
Min
0.53
0.33
Max
0.63
0.43
A
B
Ltr
JANHCB and JANKCB die
dimensions
Inches
Min
.024
.017
Max
.028
.021
Millimeters
Min
0.61
0.43
Max
0.71
0.53
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The JANHCA and JANKCA die thickness is .010 (0.25 mm)
±
.002 inches (0.05 mm).
Anode metallization:
Al, thickness = 25,000 Å minimum; cathode metallization: Au, thickness = 4000 Å
minimum.
4. The JANHCB and JANKCB die thickness is .010 (0.25 mm)
±
.002 inches (0.05 mm).
Anode metallization:
Al, thickness = 40,000 Å minimum; cathode metallization: Au, thickness = 5,000 Å
minimum.
5. Circuit layout data: For zener operation, cathode must be operated positive with respect
to anode.
6. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 3. Physical dimensions JANHC and JANKC die.
5
MEMS传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
