电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

5962-8959818VTC

产品描述Standard SRAM, 128KX8, 45ns, CMOS, CDIP32,
产品类别存储    存储   
文件大小441KB,共91页
制造商TEMIC
官网地址http://www.temic.de/
下载文档 详细参数 全文预览

5962-8959818VTC在线购买

供应商 器件名称 价格 最低购买 库存  
5962-8959818VTC - - 点击查看 点击购买

5962-8959818VTC概述

Standard SRAM, 128KX8, 45ns, CMOS, CDIP32,

5962-8959818VTC规格参数

参数名称属性值
包装说明DIP,
Reach Compliance Codeunknown
最长访问时间45 ns
JESD-30 代码R-CDIP-T32
JESD-609代码e4
长度40.64 mm
内存密度1048576 bit
内存集成电路类型STANDARD SRAM
内存宽度8
功能数量1
端子数量32
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织128KX8
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DIP
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度4.32 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子面层GOLD
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度10.16 mm
Base Number Matches1

文档预览

下载PDF文档
REVISIONS
LTR
H
DESCRIPTION
Add device type 41. Make corrections to case outline N, dimension b.
Add vendor CAGE 65786 as source of supply for device type 41.
Update boilerplate. Editorial changes throughout.
Add device types 42, 43, 44, 45, and 46. Editorial changes to pages
1, 3, 7-15. Update boilerplate. ksr
Added provisions to accommodate radiation-hardened devices.
Added device type 47 to drawing. glg
Corrected case outline 8 Figure 1 to show correct numbering of
terminals. Corrected Figure 2 Terminal connections. Corrected the
case outline Y Figure 1 to show the proper distance of E and E1.
Added note to Case outline Y Figure 1, to allow for bottom brazed
package as an alternative style to the side brazed package . Update
boilerplate. Editorial changes throughout. ksr
Changed the minimum value for the Q dimension on package T from
0.026 to 0.020 and removed footnote 12. Editorial changes
throughout.. ksr
Added device type 48 to drawing. ksr
Corrected typo on Figure 4 (Read Cycle). ksr
Vendor requested change in capacitance in Table I for devices 39 and
40 from 5 pF to 8 pF. ksr
DATE (YR-MO-DA)
97-03-26
APPROVED
Raymond Monnin
J
K
L
98-03-03
00-03-01
00-12-08
Raymond Monnin
Raymond Monnin
Raymond Monnin
M
02-12-19
Raymond Monnin
N
P
R
03-08-12
05-08-16
06-02-13
Raymond Monnin
Raymond Monnin
Raymond Monnin
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
R
35
R
15
R
36
R
16
R
37
R
17
R
38
R
18
REV
R
39
R
19
R
40
R
20
R
41
R
21
R
1
R
42
R
22
R
2
R
43
R
23
R
3
R
44
R
24
R
4
R
45
R
25
R
5
R
46
R
26
R
6
R
47
R
27
R
7
R
48
R
28
R
8
R
49
R
29
R
9
R
50
R
30
R
10
R
51
R
31
R
11
R
52
R
32
R
12
R
33
R
13
R
34
R
14
SHEET
PREPARED BY
Kenneth S. Rice
CHECKED BY
Raymond Monnin
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
APPROVED BY
Michael A. Frye
DRAWING APPROVAL DATE
89-04-21
REVISION LEVEL
R
MICROCIRCUIT, MEMORY, DIGITAL,
CMOS, 128K X 8 STATIC RANDOM
ACCESS MEMORY (SRAM) LOW POWER,
MONOLITHIC SILICON
SIZE
A
SHEET
CAGE CODE
67268
1 OF
52
5962-89598
5962-E261-06
DSCC FORM 2233
APR 97

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2651  28  615  2272  172  26  28  9  57  36 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved