The UT54ACS283E is a 4-bit binary full adder. The adder per-
forms addition of two 4-bit binary words. The sum () outputs
are provided for each bit and the resultant carry (C4) is obtained
as the fifth bit. The adders feature full internal look-ahead across
all four bits for fast carry generation.
The device is characterized over full military temperature range
of -55C to +125C.
LOGIC SYMBOL
(5)
(3)
(14)
(12)
(6)
(2)
(15)
(11)
(7)
3
C1
C0
3
0
Q
3
0
P
0
(4)
(1)
(13)
(10)
(9)
C4
1
2
3
4
V
SS
A1
A2
A3
A4
B1
B2
B3
B4
C0
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC
Publication 617-12.
1
FUNCTION TABLE
INPUT
When C0 = L
A1
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
A3
B1
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
B3
A2
L
L
L
L
H
H
H
H
L
L
L
L
H
H
H
H
A4
B2
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
B4
1
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
3
2
L
L
L
H
H
H
H
L
H
H
H
L
L
L
L
H
4
OUTPUT
When C2 = L
C2
L
L
L
L
L
L
L
H
L
L
L
H
H
H
H
H
C4
When C0 = H
1
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
3
2
L
H
H
H
H
L
L
L
H
L
L
L
L
H
H
H
When C2 = H
4
C2
L
L
L
L
L
H
H
H
L
H
H
H
H
H
H
H
C4
H = high level, L = low level
Note:
Input conditions at A1, A2, B1, B2, and C0 are used to determine outputs
1
and
2
and the value of the internal carry C2. The values at C2, A3, B3, A4, and B4 are
then used to determine outputs3,
4,
and C4.
2
LOGIC DIAGRAM
(9)
C4
B4
(11)
A4
(12)
(10)
B3
(15)
(13)
A3
(14)
B2
(2)
(1)
A2
B1
(3)
(6)
A1
C0
(5)
(7)
(4)
3
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
108
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
JC
I
I
P
D2
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation permitted @ Tc=125
o
C
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
15.0
10
3.3
UNITS
V
V
C
C
C
C/W
mA
W
Note:
1.Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
2. Per MIL-STD-883, method 1012.1, Section 3.4.1, P
D
= (T
j(max)
- T
c(max)
) /
jc
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
C
4
DC ELECTRICAL CHARACTERISTICS
(Pre and Post-Radiation)*
(V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
, -55C < T
C
< +125C)
;
Unless otherwise noted, Tc is per the temperature range ordered
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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