Buffer, ACT Series, 6-Func, 1-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14
参数名称 | 属性值 |
包装说明 | DIP, DIP14,.3 |
Reach Compliance Code | unknown |
ECCN代码 | 3A001.A.1.A |
系列 | ACT |
JESD-30 代码 | R-XDIP-T14 |
JESD-609代码 | e0 |
长度 | 19.43 mm |
逻辑集成电路类型 | BUFFER |
最大I(ol) | 0.008 A |
功能数量 | 6 |
输入次数 | 1 |
端子数量 | 14 |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP |
封装等效代码 | DIP14,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
电源 | 5 V |
Prop。Delay @ Nom-Sup | 11 ns |
传播延迟(tpd) | 11 ns |
认证状态 | Qualified |
施密特触发器 | NO |
筛选级别 | 38535Q/M;38534H;883B |
座面最大高度 | 5.08 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | TIN LEAD |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
总剂量 | 1M Rad(Si) V |
宽度 | 7.62 mm |
Base Number Matches | 1 |
5962H9653101QCA | 5962H9653101VXA | 5962H9653101QXA | 5962H9653101VCA | 5962H9653101VCC | 5962H9653101VXC | 5962H9653101QCC | 5962H9653101QXC | |
---|---|---|---|---|---|---|---|---|
描述 | Buffer, ACT Series, 6-Func, 1-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14 | Buffer, ACT Series, 6-Func, 1-Input, CMOS, CDFP14, BOTTOM BRAZED, CERAMIC, DFP-14 | Buffer, ACT Series, 6-Func, 1-Input, CMOS, CDFP14, BOTTOM BRAZED, CERAMIC, DFP-14 | Buffer, ACT Series, 6-Func, 1-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14 | Buffer, ACT Series, 6-Func, 1-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14 | Buffer, ACT Series, 6-Func, 1-Input, CMOS, CDFP14, BOTTOM BRAZED, CERAMIC, DFP-14 | Buffer, ACT Series, 6-Func, 1-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14 | Buffer, ACT Series, 6-Func, 1-Input, CMOS, CDFP14, BOTTOM BRAZED, CERAMIC, DFP-14 |
包装说明 | DIP, DIP14,.3 | DFP, FL14,.3 | DFP, FL14,.3 | DIP, DIP14,.3 | DIP, DIP14,.3 | DFP, FL14,.3 | SIDE BRAZED, CERAMIC, DIP-14 | DFP, FL14,.3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A |
系列 | ACT | ACT | ACT | ACT | ACT | ACT | ACT | ACT |
JESD-30 代码 | R-XDIP-T14 | R-XDFP-F14 | R-XDFP-F14 | R-XDIP-T14 | R-XDIP-T14 | R-XDFP-F14 | R-XDIP-T14 | R-XDFP-F14 |
JESD-609代码 | e0 | e0 | e0 | e0 | e4 | e4 | e4 | e4 |
长度 | 19.43 mm | 9.525 mm | 9.525 mm | 19.43 mm | 19.43 mm | 9.525 mm | 19.43 mm | 9.525 mm |
逻辑集成电路类型 | BUFFER | BUFFER | BUFFER | BUFFER | BUFFER | BUFFER | BUFFER | BUFFER |
最大I(ol) | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A |
功能数量 | 6 | 6 | 6 | 6 | 6 | 6 | 6 | 6 |
输入次数 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 14 | 14 | 14 | 14 | 14 | 14 | 14 | 14 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP | DFP | DFP | DIP | DIP | DFP | DIP | DFP |
封装等效代码 | DIP14,.3 | FL14,.3 | FL14,.3 | DIP14,.3 | DIP14,.3 | FL14,.3 | DIP14,.3 | FL14,.3 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | FLATPACK | FLATPACK | IN-LINE | IN-LINE | FLATPACK | IN-LINE | FLATPACK |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Prop。Delay @ Nom-Sup | 11 ns | 11 ns | 11 ns | 11 ns | 11 ns | 11 ns | 11 ns | 11 ns |
传播延迟(tpd) | 11 ns | 11 ns | 11 ns | 11 ns | 11 ns | 11 ns | 11 ns | 11 ns |
认证状态 | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified |
施密特触发器 | NO | NO | NO | NO | NO | NO | NO | NO |
筛选级别 | 38535Q/M;38534H;883B | 38535V;38534K;883S | 38535Q/M;38534H;883B | 38535V;38534K;883S | 38535V;38534K;883S | 38535V;38534K;883S | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
座面最大高度 | 5.08 mm | 2.921 mm | 2.921 mm | 5.08 mm | 5.08 mm | 2.921 mm | 5.08 mm | 2.921 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | YES | YES | NO | NO | YES | NO | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | GOLD | GOLD | GOLD | GOLD |
端子形式 | THROUGH-HOLE | FLAT | FLAT | THROUGH-HOLE | THROUGH-HOLE | FLAT | THROUGH-HOLE | FLAT |
端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
总剂量 | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V |
宽度 | 7.62 mm | 6.2865 mm | 6.2865 mm | 7.62 mm | 7.62 mm | 6.2865 mm | 7.62 mm | 6.2865 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
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