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5962H9652201VCA

产品描述AND Gate, AC Series, 3-Func, 3-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14
产品类别逻辑    逻辑   
文件大小193KB,共22页
制造商Cobham PLC
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5962H9652201VCA概述

AND Gate, AC Series, 3-Func, 3-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14

5962H9652201VCA规格参数

参数名称属性值
包装说明DIP, DIP14,.3
Reach Compliance Codeunknown
ECCN代码3A001.A.1.A
系列AC
JESD-30 代码R-XDIP-T14
JESD-609代码e0
长度19.43 mm
负载电容(CL)50 pF
逻辑集成电路类型AND GATE
最大I(ol)0.008 A
功能数量3
输入次数3
端子数量14
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DIP
封装等效代码DIP14,.3
封装形状RECTANGULAR
封装形式IN-LINE
电源5 V
Prop。Delay @ Nom-Sup13 ns
传播延迟(tpd)13 ns
认证状态Qualified
施密特触发器NO
筛选级别38535V;38534K;883S
座面最大高度5.08 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
总剂量1M Rad(Si) V
宽度7.62 mm
Base Number Matches1

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REVISIONS
LTR
A
B
DESCRIPTION
Changes in accordance with NOR 5962-R079-97. - JAK
Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update
the boilerplate to the requirements of MIL-PRF-38535. Editorial changes
throughout. - TVN
Add die requirements with appendix A. Correct title to accurately describe
device function. Delete table III, Irradiation test connections. Update the
boilerplate paragraphs to the current requirements of MIL-PRF-38535. - jak
DATE (
YR-MO-DA
)
96-11-25
05-06-28
APPROVED
Monica L. Poelking
Thomas M. Hess
C
09-03-04
Charles F. Saffle
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
C
15
C
16
C
17
C
18
REV
SHEET
PREPARED BY
Larry T. Gauder
CHECKED BY
Thanh V. Nguyen
APPROVED BY
Monica L. Poelking
DRAWING APPROVAL DATE
96-04-03
REVISION LEVEL
AMSC N/A
SIZE
CAGE CODE
C
19
C
20
C
21
C
1
C
2
C
3
C
4
C
5
C
6
C
7
C
8
C
9
C
10
C
11
C
12
C
13
C
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
MICROCIRCUIT, DIGITAL, ADVANCED CMOS,
RADIATION HARDENED, TRIPLE 3-INPUT AND GATE,
MONOLITHIC SILICON
C
A
SHEET
1
67268
OF
21
5962-96522
DSCC FORM 2233
APR 97
5962-E167-09

5962H9652201VCA相似产品对比

5962H9652201VCA 5962H9652201VXC 5962H9652201QCC 5962H9652201QXA 5962H9652201QCA 5962H9652201VCC 5962H9652201VXA
描述 AND Gate, AC Series, 3-Func, 3-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14 AND Gate, AC Series, 3-Func, 3-Input, CMOS, CDFP14, BOTTOM BRAZED, CERAMIC, DFP-14 AND Gate, AC Series, 3-Func, 3-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14 AND Gate, AC Series, 3-Func, 3-Input, CMOS, CDFP14, BOTTOM BRAZED, CERAMIC, DFP-14 AND Gate, AC Series, 3-Func, 3-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14 AND Gate, AC Series, 3-Func, 3-Input, CMOS, CDIP14, SIDE BRAZED, CERAMIC, DIP-14 AND Gate, AC Series, 3-Func, 3-Input, CMOS, CDFP14, BOTTOM BRAZED, CERAMIC, DFP-14
包装说明 DIP, DIP14,.3 DFP, FL14,.3 DIP, DIP14,.3 DFP, FL14,.3 DIP, DIP14,.3 SIDE BRAZED, CERAMIC, DIP-14 DFP, FL14,.3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
ECCN代码 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A
系列 AC AC AC AC AC AC AC
JESD-30 代码 R-XDIP-T14 R-XDFP-F14 R-XDIP-T14 R-XDFP-F14 R-XDIP-T14 R-XDIP-T14 R-XDFP-F14
JESD-609代码 e0 e4 e4 e0 e0 e4 e0
长度 19.43 mm 9.525 mm 19.43 mm 9.525 mm 19.43 mm 19.43 mm 9.525 mm
负载电容(CL) 50 pF 50 pF 50 pF 50 pF 50 pF 50 pF 50 pF
逻辑集成电路类型 AND GATE AND GATE AND GATE AND GATE AND GATE AND GATE AND GATE
最大I(ol) 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A
功能数量 3 3 3 3 3 3 3
输入次数 3 3 3 3 3 3 3
端子数量 14 14 14 14 14 14 14
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 DIP DFP DIP DFP DIP DIP DFP
封装等效代码 DIP14,.3 FL14,.3 DIP14,.3 FL14,.3 DIP14,.3 DIP14,.3 FL14,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE FLATPACK IN-LINE FLATPACK IN-LINE IN-LINE FLATPACK
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Prop。Delay @ Nom-Sup 13 ns 13 ns 13 ns 13 ns 13 ns 13 ns 13 ns
传播延迟(tpd) 13 ns 13 ns 13 ns 13 ns 13 ns 13 ns 13 ns
认证状态 Qualified Qualified Qualified Qualified Qualified Qualified Qualified
施密特触发器 NO NO NO NO NO NO NO
筛选级别 38535V;38534K;883S 38535V;38534K;883S 38535Q/M;38534H;883B 38535Q/M;38534H;883B 38535Q/M;38534H;883B 38535V;38534K;883S 38535V;38534K;883S
座面最大高度 5.08 mm 2.921 mm 5.08 mm 2.921 mm 5.08 mm 5.08 mm 2.921 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO YES NO YES NO NO YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子面层 TIN LEAD GOLD GOLD TIN LEAD TIN LEAD GOLD TIN LEAD
端子形式 THROUGH-HOLE FLAT THROUGH-HOLE FLAT THROUGH-HOLE THROUGH-HOLE FLAT
端子节距 2.54 mm 1.27 mm 2.54 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
总剂量 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V
宽度 7.62 mm 6.2865 mm 7.62 mm 6.2865 mm 7.62 mm 7.62 mm 6.2865 mm
Base Number Matches 1 1 1 1 1 1 1
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